| Citation: |
Li Guike, Feng Peng, Wu Nanjian. A novel monolithic ultraviolet image sensor based on a standard CMOS process[J]. Journal of Semiconductors, 2011, 32(10): 105009. doi: 10.1088/1674-4926/32/10/105009
Li G K, Feng P, Wu N J. A novel monolithic ultraviolet image sensor based on a standard CMOS process[J]. J. Semicond., 2011, 32(10): 105009. doi: 10.1088/1674-4926/32/10/105009.
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A novel monolithic ultraviolet image sensor based on a standard CMOS process
doi: 10.1088/1674-4926/32/10/105009
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Abstract
We present a monolithic ultraviolet (UV) image sensor based on a standard CMOS process. A compact UV sensitive device structure is designed as a pixel for the image sensor. This UV image sensor consists of a CMOS pixel array, high-voltage switches, a readout circuit and a digital control circuit. A 16 × 16 image sensor prototype chip is implemented in a 0.18 μm standard CMOS logic process. The pixel and image sensor were measured. Experimental results demonstrate that the image sensor has a high sensitivity of 0.072 V/(mJ/cm2) and can capture a UV image. It is suitable for large-scale monolithic bio-medical and space applications.-
Keywords:
- UV image sensor,
- standard CMOS process,
- floating gate
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References
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