J. Semicond. > 2019, Volume 40 > Issue 10 > 101302, doi: 10.1088/1674-4926/40/10/101302
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Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

Shujie Pan, Victoria Cao, Mengya Liao, Ying Lu, Zizhuo Liu, Mingchu Tang, Siming Chen, Alwyn Seeds and Huiyun Liu

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 Corresponding author: Siming Chen, Email: siming.chen@ucl.ac.uk

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Abstract: In the past few decades, numerous high-performance silicon (Si) photonic devices have been demonstrated. Si, as a photonic platform, has received renewed interest in recent years. Efficient Si-based III–V quantum-dot (QDs) lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of III–V compounds. Although the material dissimilarity between III–V material and Si hindered the development of monolithic integrations for over 30 years, considerable breakthroughs happened in the 2000s. In this paper, we review recent progress in the epitaxial growth of various III–V QD lasers on both offcut Si substrate and on-axis Si (001) substrate. In addition, the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.

Key words: quantum dots, silicon photonics, epitaxial growth, semiconductor laser



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Fig. 1.  (Color online) Three major issues faced in monolithic III–V/Si integration: (a) APBs, (b) TDs and (c) thermal cracks.

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Fig. 2.  (Color online) (a) Schematic illustration of the comparative interaction of threading dislocations with QWs and QDs. (b) Cross-sectional schematic description of the mechanism of dislocation bending by QDs. (c) Bright-field scanning transmission electron microscopy (TEM) images of the TDs in the QD active region[11]. Copyright © 2016, Springer Nature. With permission of Springer (c). © 2009, IEEE. Reprinted with permission from Ref. [39] (b).

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Fig. 3.  (Color online) (a) Dark-field scanning TEM image of a Si substrate with 4° off-cut. (b) High resolution high-angle annular dark-field scanning TEM image of the 6 nm-thick AlAs nucleation layer between GaAs buffer layer and a Si substrate. (c) Bright-field scanning TEM image of DFLs. (d) Bright-field scanning TEM image of the QD active layers. (e) Photoluminescence (PL) spectrum of a QD active region grown on GaAs and Si. (f) Cross-sectional scanning emission microscopy (SEM) image of the fabricated RWG laser with as-cleaved facets. Copyright © 2016, Springer Nature. With permission of Springer (a–c). Reprinted with permission from Ref. [49], The Optical Society (OSA), CC BY 4.0 (d–f).

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Fig. 4.  (Color online) (a) Measured RT CW L–I–V curves for a 50 μm × 3200 μm InAs/GaAs QD laser grown on a Si substrate. (b) Ageing data for the InAs/GaAs QD laser under CW (drive current = 210 mA) at a constant heat sink temperature of 26 °C. (c) Measured CW L–I curve from a 2.2 μm × 4 mm narrow-ridge-waveguide laser as a function of temperature. (d) Lateral near-field intensity profiles with different injection currents. Inset: infrared (IR) camera image of lasing near-field at the threshold of 20 mA (well above threshold). (e) RIN spectra up to 16 GHz at gain currents of 40, 60 and 80 mA. (f) Experimental results. Left: 25.6 Gb/s eye-diagrams at back-to-back and after transmission over 13 km SMF28. Right: measured bit-error rate (BER) results at different received power. Copyright © 2016, Springer Nature. With permission of Springer (a and b). Reprinted with permission from Ref. [49], The Optical Society (OSA), CC BY 4.0 (c–f).

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Fig. 5.  (Color online) (a) Cutaway schematic of the DFB laser array on Si (not to scale). (b) High-resolution SEM image of the gratings with a λ/4 phase shift in the middle of the etched gratings. (c) The L–I–V curve of a single 1 mm long Si-based DFB laser. (d) Optical spectra of a DFB laser array with different grating periods around their maximum output power levels before saturation at RT. Reprinted with permission from Ref. [56], The Optical Society (OSA).

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Fig. 6.  (Color online) (a) Schematic of layer structure of QD MD laser on Si. The insets are an SEM image of a cross-section of the structure (left) and a TEM image of the QD active region (right). (b) The RT CW L–I–V curve for a 25 μm × 3 mm Si-based edge-emitting QD laser. The inset shows an atomic force microscopy (AFM) image of an uncapped Si-based QD sample. (c) RT CW emission spectrum measured at a current of ~ 1.4 × threshold for MD-on-Si lasers with diameters of 14 and 30 μm. Dashed curve: PL spectrum of QD material (not in scale). The inset: an SEM image of the MD laser (D = 30 μm). Reprinted with permission from Ref. [61], The Optical Society (OSA).

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Fig. 7.  Bright-field scanning TEM image of on-axis Si (001) substrate.

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Fig. 8.  (Color online) (a) Single-facet output power versus current density for the same Si-based InAs/GaAs QD laser as a function of temperature under CW operation. The inset shows the L–I curve for this Si-based InAs/GaAs QD laser at a heat sink temperature of 36 °C. (b) Single-facet light power verses current density for an InAs/GaAs QD laser grown on GaAs/Si (001) substrate at various heat sink temperatures under pulsed condition. The inset shows the natural logarithm of current density against temperature in the ranges of 16–102 °C. (c) Measured L–I–V curve of 50 μm × 3 mm broad-area InAs/GaAs QD laser directly grown on GaAs/Si (001) substrate. (d) Measured L–I curve of InAs/GaAs QD laser directly grown on GaAs/Si (001) as a function of temperature. Inset: lasing spectrum at 180 A/cm2 injection current density. Reprinted with permission from Ref. [68], CC BY 4.0 (a and b). Reprinted with permission from Ref. [69], CC BY 4.0 (c and d).

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Fig. 9.  (Color online) (a) Schematic diagram of a microdisk laser grown on planar on-axis Si (001) substrate. (b) SEM image of a fabricated microdisk laser. (c) Collected PL spectra above and below the lasing threshold of a MD with D ~ 1.9 μm. Reprinted with Permission from Ref. [70], The Optical Society (OSA).

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[8]
Heck M J R, Bauters J F, Davenport M L, et al. Ultra-low loss waveguide platform and its integration with silicon photonics. Laser Photon Rev, 2014, 8, 667 doi: 10.1002/lpor.201300183
[9]
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[10]
Liang D, Bowers J E. Recent progress in lasers on silicon. Nat Photonics, 2010, 4, 511 doi: 10.1038/nphoton.2010.167
[11]
Chen S, et al. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nat Photonics, 2016, 10, 307 doi: 10.1038/nphoton.2016.21
[12]
Tanabe K, Watanabe K, Arakawa Y. III–V/Si hybrid photonic devices by direct fusion bonding. Sci Rep, 2012, 2349 doi: 10.1038/srep00349
[13]
Tournié E, Cerutti L, Rodriguez J B, et al. Metamorphic III–V semiconductor lasers grown on silicon. MRS Bull, 2016, 41, 218 doi: 10.1557/mrs.2016.24
[14]
Fischer R, Masselink W T, Klem J, et al. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy. J Appl Phys, 1985, 58, 374 doi: 10.1063/1.335687
[15]
Wang W I. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100). J Appl Phys, 1984, 44, 1149 doi: 10.1063/1.94673
[16]
Li Q, Lau M. Epitaxial growth of highly mismatched III–V materials on (001) silicon for electronics and optoelectronics. Prog Cryst Growth Charact Mater, 2017, 63, 105 doi: 10.1016/j.pcrysgrow.2017.10.001
[17]
Alcotte R, Martin M, Moeyaert J, et al. Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility. APL Mater, 2016, 4, 46101 doi: 10.1063/1.4945586
[18]
Akiyama M, Kawarada Y, Kaminishi K. Growth of single domain gaas layer on (100)-oriented Si substrate by MOCVD. Jpn J Appl Phys, 1984, 23, L843 doi: 10.1143/JJAP.23.L843
[19]
Norman J C, Jung D, Wan Y, et al. Perspective: The future of quantum dot photonic integrated circuits. APL Photonics, 2018, 3, 30901 doi: 10.1063/1.5021345
[20]
Wu J, Chen S, Seeds A, et al. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells. J Phys D, 2015, 48, 363001 doi: 10.1088/0022-3727/48/36/363001
[21]
Ueda O, Pearton S J. Materials and reliability handbook for semiconductor optical and electron devices. Springer, 2013
[22]
Kroemer H. A proposed class of hetero-junction injection lasers. Proc IEEE, 1963, 51, 1782
[23]
Alferov Z I. AlAs–GaAs heterojunction injection lasers with a low room-temperature threshold. Sov Phys Semicond, 1970, 3, 1107
[24]
Dingle R, Wiegmann W, Henry C H. Quantum states of confined carriers in very thin AlxGa1–xAs–GaAs–AlxGa1–xAs heterostructures. Dordrecht: Springer, 1988, 173
[25]
Kapon E, Simhony S, Bhat R, et al. Single quantum wire semiconductor lasers. Appl Phys Lett, 1989, 55, 2715 doi: 10.1063/1.101934
[26]
Arakawa Y, Sakaki H. Multidimensional quantum well laser and temperature dependence of its threshold current. Appl Phys Lett, 1982, 40, 939 doi: 10.1063/1.92959
[27]
Kirstaedter N, Ledentsov N N, Grundmann M, et al. Low threshold, large To injection laser emission from (InGa)As quantum dots. Electron Lett, 1994, 30, 1416 doi: 10.1049/el:19940939
[28]
Nishi K, Takemasa K, Sugawara M, et al. Development of quantum dot lasers for data-com and silicon photonics applications. IEEE J Sel Top Quantum Electron, 2017, 23, 1 doi: 10.1109/JSTQE.2017.2699787
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Ilahi B, Souaf M, Baira M, et al. Evolution of InAs/GaAs QDs size with the growth rate: a numerical investigation. J Nanomater, 2015, 2015, 1 doi: 10.1155/2015/847018
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    Received: 29 June 2019 Revised: 27 July 2019 Online: Uncorrected proof: 03 September 2019Accepted Manuscript: 03 September 2019Published: 01 October 2019

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      Article Navigation >  Journal of Semiconductors  > 2019  >  40(10): 101302
      Shujie Pan, Victoria Cao, Mengya Liao, Ying Lu, Zizhuo Liu, Mingchu Tang, Siming Chen, Alwyn Seeds, Huiyun Liu. Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate[J]. Journal of Semiconductors, 2019, 40(10): 101302. doi: 10.1088/1674-4926/40/10/101302 S J Pan, V Cao, M Y Liao, Y Lu, Z Z Liu, M C Tang, S M Chen, A Seeds, H Y Liu, Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate[J]. J. Semicond., 2019, 40(10): 101302. doi: 10.1088/1674-4926/40/10/101302.Export: BibTex EndNote
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      Shujie Pan, Victoria Cao, Mengya Liao, Ying Lu, Zizhuo Liu, Mingchu Tang, Siming Chen, Alwyn Seeds, Huiyun Liu. Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate[J]. Journal of Semiconductors, 2019, 40(10): 101302. doi: 10.1088/1674-4926/40/10/101302

      S J Pan, V Cao, M Y Liao, Y Lu, Z Z Liu, M C Tang, S M Chen, A Seeds, H Y Liu, Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate[J]. J. Semicond., 2019, 40(10): 101302. doi: 10.1088/1674-4926/40/10/101302.
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      Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

      doi: 10.1088/1674-4926/40/10/101302

      • Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK

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      • Corresponding author: Email: siming.chen@ucl.ac.uk
      • Received Date: 2019-06-29
      • Revised Date: 2019-07-27
      • Published Date: 2019-10-01

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