| Citation: |
Chen San, Qian Bo, Chen Kunji, Cen Zhanhong, Liu Yansong, Han Peigao, Ma Zhongyuan, Xu Jun, Li Wei, Huang Xinfan. Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities[J]. Journal of Semiconductors, 2006, In Press.
Chen S, Qian B, Chen K J, Cen Z H, Liu Y S, Han P G, Ma Z Y, Xu J, Li W, Huang X F. Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities[J]. Chin. J. Semicond., 2006, 27(13): 25.
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Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities
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Abstract
We fabricate a-Si/a-SiNz superlattices and a one-dimensional amorphous silicon nitride photonic crystal microcavity by plasma enhancement chemical vapor deposition (PECVD).To improve the light-emitting efficiency of the nc-Si/a-SiNz superlattices,which are made from a-Si/a-SiNz superlattices by laser annealing,an nc-Si quantum dot array is inserted into the photonic crystal microcavity.Raman spectroscopy and transmission electron microscopy analysis show that nc-Si with a size of 4nm,which is close to the designed thickness of the a-Si sublayers,is formed in the a-Si sublayers.Owing to microcavity effects,the PL peak of the nc-Si/a-SiNzsuperlattices embedded in the microcavity is strongly narrowed,and the intensity of the PL is enhanced by two orders of magnitude with respect to the emission of λ/2-thick nc-Si/a-SiNz superlattices.Light emission at a cavity-resonant frequency from the nc-Si/a-SiNz superlattices is enhanced while other frequencies are forbidden.This leads to the narrowing of the PL spectrum and enhancement of the intensity.-
Keywords:
- microcavity,
- photonic crystal,
- photoluminescence
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