Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 136-139

Switching Characteristics of Resonant Tunneling Diodes

Zhang Shilin, Guo Weilian, Liang Huilai, Niu Pingjuan and Wang Zhenkun

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Abstract: Using a P8510( C) network analyzer, the scattering parameter ( S22 ) Of AlAs/ InGaAs/AlAs resonant tunneling diodes (RTD) is measured. Equivalent circuit parameters are obtained by curve fit. The RTD switching time is estimated by Using the measured capacitance and aVerage negatiVe differential resistance. The minimum rise time of the sample is estimated to be 21ps.

Key words: resonant tunneling diodes (RTD) S parameter equivalent circuit switching time

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Zhang Shilin, Guo Weilian, Liang Huilai, Niu Pingjuan, Wang Zhenkun. Switching Characteristics of Resonant Tunneling Diodes[J]. Journal of Semiconductors, 2003, In Press. Zhang S L, Guo W L, Liang H L, Niu P J, Wang Z K. Switching Characteristics of Resonant Tunneling Diodes[J]. Chin. J. Semicond., 2003, 24(S1): 136.Export: BibTex EndNote
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      Zhang Shilin, Guo Weilian, Liang Huilai, Niu Pingjuan, Wang Zhenkun. Switching Characteristics of Resonant Tunneling Diodes[J]. Journal of Semiconductors, 2003, In Press.

      Zhang S L, Guo W L, Liang H L, Niu P J, Wang Z K. Switching Characteristics of Resonant Tunneling Diodes[J]. Chin. J. Semicond., 2003, 24(S1): 136.
      Export: BibTex EndNote

      Switching Characteristics of Resonant Tunneling Diodes

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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