| Citation: |
Khizar-ul-Haq, Khan M A, Jiang Xueyin, Zhang Zhilin, Zhang Xiaowen, Zhang Liang, Li Jun. Estimation of electron mobility of n-doped 4, 7-diphenyl-1, 10-phenanthroline using space-charge-limited currents[J]. Journal of Semiconductors, 2009, 30(11): 114009. doi: 10.1088/1674-4926/30/11/114009
Khizar-ul-Haq, Khan M A, Jiang X Y, Zhang Z L, Zhang X W, Zhang L, Li J. Estimation of electron mobility of n-doped 4, 7-diphenyl-1, 10-phenanthroline using space-charge-limited currents[J]. J. Semicond., 2009, 30(11): 114009. doi: 10.1088/1674-4926/30/11/114009.
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Estimation of electron mobility of n-doped 4, 7-diphenyl-1, 10-phenanthroline using space-charge-limited currents
doi: 10.1088/1674-4926/30/11/114009
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Abstract
The electron mobilities of 4, 7-diphenyl-1, 10-phenanthroline (BPhen) doped 8-hydroxyquinolinato-lithium (Liq) at various thicknesses (50–300 nm) have been estimated by using space-charge-limited current measurements. It is observed that the electron mobility of 33 wt% Liq doped BPhen approaches its true value when the thickness is more than 200 nm. The electron mobility of 33 wt% Liq doped BPhen at 300 nm is found to be ～5.2E-3 cm2/(V·s) (at 0.3 MV/cm) with weak dependence on electric field, which is about one order of magnitude higher than that of pristine BPhen (3.4E-4 cm2/(V·s)) measured by SCLC. For the typical thickness of organic light-emitting devices, the electron mobility of doped BPhen is also investigated.-
Keywords:
- doping,
- electron mobility,
- SCLC,
- 8-hydroxyquinolinonate-lithium (Liq)
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