Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 591-595
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Film Bulk Acoustic Resonator Based on AlN Piezoelectric Cell

Hu Guang, Zhang Kai, Ye Yun, Wu Wen, Liu Chan and Gu Haoshuang

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Abstract: Film bulk acoustic resoqator was fabricated in backside air-gap structure using silicon bulk micromachining tech. tuque，with aluminum nitride films as piezoelectric material.Measurement results show that the AlN films deposited under optimized sputtering condition，are featured in (002) preferred orientation and well.textured columnar structure. The fashioned air-gap, characterized by scanning microscope，is confirmed with smooth surface on the back and good anisotropy.The fabricated resonator IS measured using a network analyzer，and finally achieves a resonant frequency of 2.537GHz，effective electromechanical coupling coefficient 3.75％，series quality and parallel quality of 101.8 and 79.7, respectively.

Key words: film bulk acoustic resonator, aluminum nitride, preferred orientation, air.gap

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 591-595
      Hu Guang, Zhang Kai, Ye Yun, Wu Wen, Liu Chan, Gu Haoshuang. Film Bulk Acoustic Resonator Based on AlN Piezoelectric Cell[J]. Journal of Semiconductors, 2007, In Press. Hu G, Zhang K, Ye Y, Wu W, Liu C, Gu H S. Film Bulk Acoustic Resonator Based on AlN Piezoelectric Cell[J]. Chin. J. Semicond., 2007, 28(S1): 591.Export: BibTex EndNote
      Citation:
      Hu Guang, Zhang Kai, Ye Yun, Wu Wen, Liu Chan, Gu Haoshuang. Film Bulk Acoustic Resonator Based on AlN Piezoelectric Cell[J]. Journal of Semiconductors, 2007, In Press.

      Hu G, Zhang K, Ye Y, Wu W, Liu C, Gu H S. Film Bulk Acoustic Resonator Based on AlN Piezoelectric Cell[J]. Chin. J. Semicond., 2007, 28(S1): 591.
      Export: BibTex EndNote
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      Film Bulk Acoustic Resonator Based on AlN Piezoelectric Cell

      • Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Faculty of Physics & Electronic Technology，Hubei University，Wuhan 430062, China,Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Faculty of Physics & Electronic Technology，Hubei University，Wuhan 430062, China,Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Faculty of Physics & Electronic Technology，Hubei University，Wuhan 430062, China,Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Faculty of Physics & Electronic Technology，Hubei University，Wuhan 430062, China,Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Faculty of Physics & Electronic Technology，Hubei University，Wuhan 430062, China and Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Faculty of Physics & Electronic Technology，Hubei University，Wuhan 430062, China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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