| Citation: |
Wang Qi, Wang Ronghua, Xia Dongmei, Zheng Youdou, Han Ping, Yu Huiqiang, Mei Qin, Xie Zili, Xiu Xiangqian, Zhu Shunming, Gu Shulin, Shi Yi, Zhang Rong. Effect of the Thickness of the Strained Si on Hall Mobility[J]. Journal of Semiconductors, 2007, In Press.
Wang Q, Wang R H, Xia D M, Zheng Y D, Han P, Yu H Q, Mei Q, Xie Z L, Xiu X Q, Zhu S M, Gu S L, Shi Y, Zhang R. Effect of the Thickness of the Strained Si on Hall Mobility[J]. Chin. J. Semicond., 2007, 28(S1): 130.
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Effect of the Thickness of the Strained Si on Hall Mobility
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Abstract
The strained Si layer is grown on the SiC/Si substrate by a low-pressure chemical vapor deposition (LPCVD) systern.The crystal quality of the layer is characterized by X-ray diffraction and Ramanspectroscopy.X-ray diffraction and Raman spectra of the sample indicate the Si layer is strained. The SEM image of the sample indicates there is the Si/SiC/Si structure.A high Hall mobility value of 300cm2/(V·s) (300K) is obtained in the strained Si layer，which is due to the eompressive biaxial strain in this layer.-
Keywords:
- strained Si,
- SiC,
- CVD,
- Hall mobility
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References
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Proportional views
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