Chin. J. Semicond. > 2002, Volume 23 > Issue 2 > 188-192
|

CONTENTS

基于实验与物理分析的4H-SiC射频功率MESFET大信号非线性精确电容模型

杨林安 , 张义门 and 张玉明

+ Author Affiliations

PDF

Key words: 4H-SiC, 射频功率MESFET, 非线性大信号模型, 电容模型

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 2283 Times PDF downloads: 1070 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 2002

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2002  >  23(2): 188-192
      Export: BibTex EndNote
      Citation:


      Export: BibTex EndNote
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return