| Citation: |
Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Yang Hao, Xu Jingbo, Song Yuzhu, Zhang Jian, Niu Jiebin, Liu Xunchun. In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J]. Journal of Semiconductors, 2007, In Press.
Liu L, Zhang H Y, Yin J J, Li X, Yang H, Xu J B, Song Y Z, Zhang J, Niu J B, Liu X C. In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J]. Chin. J. Semicond., 2007, 28(12): 1860.
Export: BibTex EndNote
|
In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz
-
Abstract
By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency (fmax) of 183GHz was fabricated.Thefmax is the highest value for HEMTs in China.Also,the devices are reported,including the device structure,the fabrication process,and the DC and RF performances. -
References
-
Proportional views
DownLoad: