| Citation: |
Wang Dongfang, Wei Ke, Yuan Tingting, Liu Xinyu. High performance AlGaN/GaN HEMTs with 2.4 μm source–drain spacing[J]. Journal of Semiconductors, 2010, 31(3): 034001. doi: 10.1088/1674-4926/31/3/034001
Wang D F, Wei K, Yuan T T, Liu X Y. High performance AlGaN/GaN HEMTs with 2.4 μm source–drain spacing[J]. J. Semicond., 2010, 31(3): 034001. doi: 10.1088/1674-4926/31/3/034001.
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High performance AlGaN/GaN HEMTs with 2.4 μm source–drain spacing
doi: 10.1088/1674-4926/31/3/034001
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Abstract
This paper describes the performance of AlGaN/GaN HEMTs with 2.4 μm source–drain spacing. So far these are the smallest source–drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 μm source–drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased.-
Keywords:
- AlGaN/GaN HEMT,
- high frequency,
- source–drain spacing
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References
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Proportional views
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