Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 239-241

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Microwave Power-Tested Technology of SiC MESFET

Wang Tongxiang, Pan Hongshu and Li Liang

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Abstract: The microwave testing system of SiC MESFET is analyzed.For the device based on the third era semiconductor,the microwave testing system of SiC MESFET is established associating to the testing technology of Si and GaAs MESFET.The test of watt level power output is accomplished under the working frequency of 2GHz.The result is that the power gain is greater than 6dB,the fT is 6.7GHz,and fmax achieves 25GHz.

Key words: microwave powertestingSiC MESFET output power

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

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      Wang Tongxiang, Pan Hongshu, Li Liang. Microwave Power-Tested Technology of SiC MESFET[J]. Journal of Semiconductors, 2006, In Press. Wang T X, Pan H S, Li L. Microwave Power-Tested Technology of SiC MESFET[J]. Chin. J. Semicond., 2006, 27(13): 239.Export: BibTex EndNote
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      Wang Tongxiang, Pan Hongshu, Li Liang. Microwave Power-Tested Technology of SiC MESFET[J]. Journal of Semiconductors, 2006, In Press.

      Wang T X, Pan H S, Li L. Microwave Power-Tested Technology of SiC MESFET[J]. Chin. J. Semicond., 2006, 27(13): 239.
      Export: BibTex EndNote

      Microwave Power-Tested Technology of SiC MESFET

      • Received Date: 2015-08-20

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