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Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture

Yuanfu Zhao1, Hongchao Zheng1, , Long Fan1, Suge Yue1, 2, Maoxin Chen1 and Shougang Du1

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 Corresponding author: Zheng Hongchao, Email: hongchao_zheng@163.com

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Abstract: An experimental system is developed for the transient radiation effects testing of an anti-radiation hardened processor. Based on this system, the transient radiation effects in a microprocessor based on SPARC-V8 architecture was investigated. The dose-rate-soft-error index parameters of the processor were determined according to the test results, as were the influences on the function and timing parameters of the processor. The power supply balance is affected, which caused the system to reset and be the main source of soft errors. The results showed the circuit recovery time is primarily determined by the internal PLL, while the core power and the output-low-IO ports are more sensitive to the transient dose rate effect. The power-integrity-hardened design is proposed to mitigate the transient radiation effect.

Key words: microprocessortransient dose rate effecttransient radiation effect



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Fig. 1.  Transient-dose-rate-effect ofinverter. (a) Circuit layout. (b) Circuit diagram.

Fig. 2.  Transient-dose-rate-effect test system.

Fig. 3.  PCB of test system.

Fig. 4.  (Color online) Signal change of power and IO (1.5 × 10$^{10}$rad(Si)/s).

Fig. 5.  (Color online) Signal change of IO-H.

Fig. 6.  (Color online) Signal change of IO-L.

Fig. 7.  (Color online) Signal change of IO-PLL.

Fig. 8.  (Color online) Amplitude changes of voltage waveform.

Fig. 9.  (Color online) Changes of recovery time.

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    Received: 11 June 2015 Revised: Online: Published: 01 November 2015

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      Yuanfu Zhao, Hongchao Zheng, Long Fan, Suge Yue, Maoxin Chen, Shougang Du. Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture[J]. Journal of Semiconductors, 2015, 36(11): 114008. doi: 10.1088/1674-4926/36/11/114008 Y F Zhao, H C Zheng, L Fan, S G Yue, M X Chen, S G Du. Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture[J]. J. Semicond., 2015, 36(11): 114008. doi: 10.1088/1674-4926/36/11/114008.Export: BibTex EndNote
      Citation:
      Yuanfu Zhao, Hongchao Zheng, Long Fan, Suge Yue, Maoxin Chen, Shougang Du. Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture[J]. Journal of Semiconductors, 2015, 36(11): 114008. doi: 10.1088/1674-4926/36/11/114008

      Y F Zhao, H C Zheng, L Fan, S G Yue, M X Chen, S G Du. Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture[J]. J. Semicond., 2015, 36(11): 114008. doi: 10.1088/1674-4926/36/11/114008.
      Export: BibTex EndNote

      Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture

      doi: 10.1088/1674-4926/36/11/114008
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      • Corresponding author: Zheng Hongchao, Email: hongchao_zheng@163.com
      • Received Date: 2015-06-11
      • Accepted Date: 2015-07-23
      • Published Date: 2015-01-25

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