Abstract: A new 2D analytical model for the surface electrical field distribution and optimization of bulk-silicon double RESURF devices is presented.Based on the solution to the 2D Poisson's equation,the model gives the influence on the surface electrical field of the drain bias and structure parameters such as the doping concentration,the depth and the position of the p-top region,the thickness and the doping concentration of the drift region,and the substrate doping concentration.The dependence of breakdown voltage on the length and doping concentration of the drift region is also calculated.Further more,an effective way to gain the optimum high-voltage is also proposed.All analytical results are verified by simulation results obtained by MEDICI and previous experimental data,showing the validity of the model presented here.

Key words: bulk-silicon, double RESURF, surface electrical field, optimization