Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 999-1004

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恒压应力下超薄栅nMOSFET软击穿后的衬底电流特性

王彦刚 , 许铭真 , 谭长华 and 段小蓉

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Key words: 衬底电流软击穿超薄栅氧化层威布尔分布变频光泵效应

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2005

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      • Received Date: 2015-08-19

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