Fig. 1.
Setup for the ultrasonic spray pyrolysis deposition of SnSe and SnSe$_{2}$ thin films.
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Jorge Sergio Narro-Rios, Manoj Ramachandran, Dalia Martínez-Escobar, Aarón Sánchez-Juárez. Ultrasonic spray pyrolysis deposition of SnSe and SnSe2 using a single spray solution[J]. Journal of Semiconductors, 2013, 34(1): 013001. doi: 10.1088/1674-4926/34/1/013001
J S Narro-Rios, M Ramachandran, D Martínez-Escobar, A Sánchez-Juárez. Ultrasonic spray pyrolysis deposition of SnSe and SnSe2 using a single spray solution[J]. J. Semicond., 2013, 34(1): 013001. doi: 10.1088/1674-4926/34/1/013001.
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Ultrasonic spray pyrolysis deposition of SnSe and SnSe2 using a single spray solution
doi: 10.1088/1674-4926/34/1/013001
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Abstract
Thin films of SnSe and SnSe2 have been deposited using the ultrasonic spray pyrolysis (USP) technique. To the best of our knowledge this is the first report of the deposition of SnSe and SnSe2 thin films using a single spray solution. The use of a single spray solution for obtaining both a p-type material, SnSe, and an n-type material, SnSe2, simplifies the deposition technique. The SnSe2 thin films have a bandgap of 1.1 eV and the SnSe thin films have a band gap of 0.9 eV. The Hall measurements were used to determine the resistivity of the thin films. The SnSe2 thin films show a resistivity of 36.73 Ω·cm and n-type conductivity while the SnSe thin films show a resistivity of 180 Ω·cm and p-type conductivity.-
Keywords:
- SnSe,
- SnSe2,
- ultrasonic spray pyrolysis technique
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References
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