Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 128-131

P-Type Si/Sige resonant Tunnelling diodes

Xiong Chenrong, Wang Minsheng, Huang Wentao, Chen Peiyi, Wang Yan and Luo Guangli

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Abstract: P-type double-barrier quantum well resonant tunnelling diodes is realiZed by ultra high vacuum epitaxy tool GS400. A peak to valley current ratio of 1. 13 and a peak current density of 1. 589kA/cm2 at room temperature ( 293K D from continuous dc current-voltage measurements are recorded while at 77K With pulsed current-voltage measurements the corresponding values are 1. 24 and 1. 086kA/cm2 . The loW PVCR in both cases are attributed to the energy band features and thermal effects of Si1-IGeI/Si heterostructures.

Key words: RTDs

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Xiong Chenrong, Wang Minsheng, Huang Wentao, Chen Peiyi, Wang Yan, Luo Guangli. P-Type Si/Sige resonant Tunnelling diodes[J]. Journal of Semiconductors, 2003, In Press. Xiong C R, Wang M S, Huang W T, Chen P Y, Wang Y, Luo G L. P-Type Si/Sige resonant Tunnelling diodes[J]. Chin. J. Semicond., 2003, 24(S1): 128.Export: BibTex EndNote
      Citation:
      Xiong Chenrong, Wang Minsheng, Huang Wentao, Chen Peiyi, Wang Yan, Luo Guangli. P-Type Si/Sige resonant Tunnelling diodes[J]. Journal of Semiconductors, 2003, In Press.

      Xiong C R, Wang M S, Huang W T, Chen P Y, Wang Y, Luo G L. P-Type Si/Sige resonant Tunnelling diodes[J]. Chin. J. Semicond., 2003, 24(S1): 128.
      Export: BibTex EndNote

      P-Type Si/Sige resonant Tunnelling diodes

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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