| Citation: |
Feng Quanlin, He Ziqiang, Chang Qing, Zhou Qigang. Effect of Rapid Thermal Annealing Ambient on Gettering Efficiency and Surface Microstructure in 300mm CZ Silicon Wafers[J]. Journal of Semiconductors, 2008, In Press.
Feng Q L, He Z Q, Chang Q, Zhou Q G. Effect of Rapid Thermal Annealing Ambient on Gettering Efficiency and Surface Microstructure in 300mm CZ Silicon Wafers[J]. J. Semicond., 2008, 29(5): 822.
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Effect of Rapid Thermal Annealing Ambient on Gettering Efficiency and Surface Microstructure in 300mm CZ Silicon Wafers
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Abstract
The effect of rapid thermal annealing (RTA) ambient on denuded zone and oxygen precipitates in Czochralski (CZ) silicon wafers is studied in this paper.N2 and a N2/NH3 mixture are used as RTA ambient.It is demonstrated that a high density of oxygen precipitates and thin denuded zone are obtained in N2/NH3 ambient,while a relatively lower density of oxygen precipitates and thicker denuded zone are observed in N2 ambient.As the RTA duration times increased,the oxygen precipitate density increased and the denuded zone depth decreased.X-ray photoelectron spectroscopy (XPS) data and atomic force microscope (AFM) results show that there was a surface nitriding reaction during the N2/NH3 ambient RTA process,which can explain the different effect of RTA ambient.-
Keywords:
- 300mm CZ silicon wafer,
- denuded zone,
- intrinsic gettering,
- RTA,
- XPS,
- AFM
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References
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Proportional views
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