SEMICONDUCTOR PHYSICS

Observation of ferromagnetism in highly oxygen-deficient HfO2 films

Jiang Ran and Zhang Yan

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Abstract: Ferromagnetism in undoped and cobalt-doped high-k HfO2 films was investigated. No ferromagnetism was observed in stoichiometric HfO2 films, but we observed weak ferromagnetism in highly oxygen-deficient HfO2 films. Undoped and cobalt doped films were treated by alternate annealing in vacuum and oxygen atmospheres. From the experiments, both the lack of oxygen vacancies and the increase of oxygen species in bulk (e.g. interstitial oxygen) will degrade the magnetic ordering. Additionally, it is believed that cobalt doping has no obvious relationship with the observed intrinsic d0 magnetism.

Key words: sputtering dielectrics high k d0

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    Received: 18 August 2015 Revised: 03 June 2009 Online: Published: 01 October 2009

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      Jiang Ran, Zhang Yan. Observation of ferromagnetism in highly oxygen-deficient HfO2 films[J]. Journal of Semiconductors, 2009, 30(10): 102002. doi: 10.1088/1674-4926/30/10/102002 Jiang R, Zhang Y. Observation of ferromagnetism in highly oxygen-deficient HfO2 films[J]. J. Semicond., 2009, 30(10): 102002. doi: 10.1088/1674-4926/30/10/102002.Export: BibTex EndNote
      Citation:
      Jiang Ran, Zhang Yan. Observation of ferromagnetism in highly oxygen-deficient HfO2 films[J]. Journal of Semiconductors, 2009, 30(10): 102002. doi: 10.1088/1674-4926/30/10/102002

      Jiang R, Zhang Y. Observation of ferromagnetism in highly oxygen-deficient HfO2 films[J]. J. Semicond., 2009, 30(10): 102002. doi: 10.1088/1674-4926/30/10/102002.
      Export: BibTex EndNote

      Observation of ferromagnetism in highly oxygen-deficient HfO2 films

      doi: 10.1088/1674-4926/30/10/102002
      • Received Date: 2015-08-18
      • Accepted Date: 2009-02-17
      • Revised Date: 2009-06-03
      • Published Date: 2009-09-28

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