J. Semicond. > 2016, Volume 37 > Issue 4 > 043001, doi: 10.1088/1674-4926/37/4/043001
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SEMICONDUCTOR MATERIALS

Low substrate temperature deposition of transparent and conducting ZnO: Al thin films by RF magnetron sputtering

Ravindra Waykar1, Amit Pawbake1, Rupali Kulkarni1, Ashok Jadhavar1, Adinath Funde1, Vaishali Waman2, Rupesh Dewan3, Habib Pathan3 and Sandesh Jadkar3

+ Author Affiliations

 Corresponding author: Sandesh Jadkar, Email: sandesh@physics.unipune.ac.in

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Abstract: Transparent and conducting Al-doped ZnO (ZnO:Al) films were prepared on glass substrate using the RF sputtering method at different substrate temperatures from room temperature (RT) to 200℃. The structural, morphological, electrical and optical properties of these films were investigated using a variety of characterization techniques such as low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field-emission scanning electron microscopy (FE-SEM), Hall measurement and UV-visible spectroscopy. The electrical properties showed that films deposited at RT have the lowest resistivity and it increases with an increase in the substrate temperature whereas carrier mobility and concentration decrease with an increase in substrate temperature. Low angle XRD and Raman spectroscopy analysis reavealed that films are highly crystalline with a hexagonal wurtzite structure and a preferred orientation along the c-axis. The FE-SEM analysis showed that the surface morphology of films is strongly dependent on the substrate temperature. The band gap decreases from 3.36 to 3.29 eV as the substrate temperature is increased from RT to 200℃. The fundamental absorption edge in the UV region shifts towards a longer wavelength with an increase in substrate temperature and be attributed to the Burstein-Moss shift. The synthesized films showed an average transmission (>85%) in the visible region, which signifies that synthesized ZnO:Al films can be suitable for display devices and solar cells as transparent electrodes.

Key words: ZnO thin film, substrate temperature, optical properties



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Fig. 1.  Low angle XRD pattern of ZnO:Al thin films deposited at various substrate temperatures by RF magnetron sputtering.

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Fig. 2.  (Color online) (a) Raman spectra of ZnO:Al films deposited at different substrate temperatures. (b) Typical de-convoluted Raman spectra for ZnO:Al film deposited at room temperature (RT).

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Fig. 3.  (Color online) (a) XPS survey spectra,(b) core line of Zn 2p,(c) deconvoluted O 1s region,(d) core line of Al for ZnO:Al film deposited at room temperature.

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Fig. 4.  Dependence of electrical properties of (a) electrical resistivity,(b) charge carrier mobility and (c) carrier concentration on substrate temperature of ZnO: Al films prepared by RF magnetron sputtering.

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Fig. 5.  Field emission scanning electron microscopy (FE-SEM) images of ZnO:Al films deposited at different substrate temperatures.

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Fig. 6.  (Color online) Transmittance spectra of ZnO:Al film deposited at various temperatures using RF magnetron sputtering.

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Table 1.   Process parameters employed during the deposition of ZnO:Al films.

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Table 2.   Angle of diffraction (2$\theta )$,the full width at half-maximum (FWHM) and the crystallite size ($d_{\rm x\text{-}ray}$) of ZnO:Al thin films prepared by using RF magnetron sputtering method at different substrate temperatures.

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    Received: 30 July 2015 Revised: Online: Published: 01 April 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(4): 043001
      Ravindra Waykar, Amit Pawbake, Rupali Kulkarni, Ashok Jadhavar, Adinath Funde, Vaishali Waman, Rupesh Dewan, Habib Pathan, Sandesh Jadkar. Low substrate temperature deposition of transparent and conducting ZnO: Al thin films by RF magnetron sputtering[J]. Journal of Semiconductors, 2016, 37(4): 043001. doi: 10.1088/1674-4926/37/4/043001 R Waykar, A Pawbake, R Kulkarni, A Jadhavar, A Funde, V Waman, R Dewan, H Pathan, Sandesh Jadkar and E Jadkar. Low substrate temperature deposition of transparent and conducting ZnO: Al thin films by RF magnetron sputtering[J]. J. Semicond., 2016, 37(4): 043001. doi: 10.1088/1674-4926/37/4/043001.Export: BibTex EndNote
      Citation:
      Ravindra Waykar, Amit Pawbake, Rupali Kulkarni, Ashok Jadhavar, Adinath Funde, Vaishali Waman, Rupesh Dewan, Habib Pathan, Sandesh Jadkar. Low substrate temperature deposition of transparent and conducting ZnO: Al thin films by RF magnetron sputtering[J]. Journal of Semiconductors, 2016, 37(4): 043001. doi: 10.1088/1674-4926/37/4/043001

      R Waykar, A Pawbake, R Kulkarni, A Jadhavar, A Funde, V Waman, R Dewan, H Pathan, Sandesh Jadkar and E Jadkar. Low substrate temperature deposition of transparent and conducting ZnO: Al thin films by RF magnetron sputtering[J]. J. Semicond., 2016, 37(4): 043001. doi: 10.1088/1674-4926/37/4/043001.
      Export: BibTex EndNote
      shu

      Low substrate temperature deposition of transparent and conducting ZnO: Al thin films by RF magnetron sputtering

      doi: 10.1088/1674-4926/37/4/043001
      • 1.

        School of Energy Studies, Savitribai Phule Pune University, Pune 411007, India

      • 2.

        Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411005, India

      • 3.

        Department of Physics, Savitribai Phule Pune University, Pune 411007, India

      More Information
      • Corresponding author: Email: sandesh@physics.unipune.ac.in
      • Received Date: 2015-07-30
      • Accepted Date: 2015-09-12
      • Published Date: 2016-01-25

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