SEMICONDUCTOR DEVICES

Capacitance and conductance dispersion in AlGaN/GaN heterostructure

Dawei Yan, Fuxue Wang, Zhaomin Zhu, Jianmin Cheng and Xiaofeng Gu

+ Author Affiliations

 Corresponding author: Yan Dawei, Email:daweiyan@jiangnan.edu.cn

PDF

Abstract: The dispersion mechanism in Al0.27Ga0.73N/GaN heterostructure was investigated using frequency-dependent capacitance and conductance measurements. It was found that the significant capacitance and conductance dispersion occurred primarily for measurement frequency beyond 100 kHz before the channel cutoff at the interface, suggesting that the vertical polarization electrical field under the gate metal should be closely related with the observed dispersive behavior. According to the Schottky-Read-Hall model, a traditional trapping mechanism cannot be used to explain our result. Instead, a piezoelectric polarization strain relaxation model was adopted to interpret the dispersion. By fitting the obtained capacitance data, the corresponding characteristic time and charge density were determined 10-8 s and 5.26×1012 cm-2 respectively, in good agreement with the conductance data and theoretical prediction.

Key words: capacitance dispersionAlGaN/GaN heterostructurestrain relaxation model



[1]
Nguyen C, Nguyen N X, Grider D E. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies. Electron Lett, 1999, 35(16):1380 doi: 10.1049/el:19990957
[2]
Vetury R, Zhang N Q, Keller S, et al. The impact of surface states on the dc and RF characteristics of AlGaN-GaN HFETs. IEEE Trans Electron Devices, 2001, 48(3):560 doi: 10.1109/16.906451
[3]
Verzellesi G, Pierobon R, Rampazzo F, et al. Experimental/numerical investigation on current collapse in AlGaN-GaN HEMTs. IEDM Tech Dig, 2002:689
[4]
Tarakji A, Simin G, Ilinskaya N, et al. Mechanism of radio-frequency current collapse InGaN-AlGaN field-effect transistors. Appl Phys Lett, 2001, 78(15):2169 doi: 10.1063/1.1363694
[5]
Simin G, Koudymov A, Tarakji A, et al. Induced strain mechanism of current collapse in AlGaN-GaN heterostructure field-effect transistors. Appl Phys Lett, 2001, 79(16):2651 doi: 10.1063/1.1412282
[6]
Miller E J, Dang X Z, Wieder H H, et al. Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor. J Appl Phys, 2001, 87(11):8070
[7]
Xue F S. Trapping in AlGaN/GaN HFET. Research & Progress of SSE, 2007, 27(4):457
[8]
Bleaney B I, Bleaney B. Electricity and magnetism. 3rd ed. London:Oxford University Press, 1976
[9]
Yan D W, Lu H, Cao D S, et al. On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors. Appl Phys Lett, 2010, 97(16):153503
[10]
Anwar A F M, Webster R T, Kurt V S. Bias induced strain in AlGaN/GaN heterojunction field effect transistors and its implications. Appl Phys Lett, 2006, 88(20):203510 doi: 10.1063/1.2203739
Fig. 1.  Schematic diagram of the fabricated AlGaN/GaN heterostructure Schottky diode.

Fig. 2.  Typical (a) capacitance and (b) conductance data measured from 10 kHz to 2 MHz at room temperature.

Fig. 3.  Band diagram of the AlGaN/GaN Schottky diode.

Fig. 4.  DC and low-frequency leakage conductance of the fabricated samples.

Fig. 5.  Experimental capacitance data as a function of angular frequency.

Fig. 6.  Experimental conductance data as a function of angular frequency.

[1]
Nguyen C, Nguyen N X, Grider D E. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies. Electron Lett, 1999, 35(16):1380 doi: 10.1049/el:19990957
[2]
Vetury R, Zhang N Q, Keller S, et al. The impact of surface states on the dc and RF characteristics of AlGaN-GaN HFETs. IEEE Trans Electron Devices, 2001, 48(3):560 doi: 10.1109/16.906451
[3]
Verzellesi G, Pierobon R, Rampazzo F, et al. Experimental/numerical investigation on current collapse in AlGaN-GaN HEMTs. IEDM Tech Dig, 2002:689
[4]
Tarakji A, Simin G, Ilinskaya N, et al. Mechanism of radio-frequency current collapse InGaN-AlGaN field-effect transistors. Appl Phys Lett, 2001, 78(15):2169 doi: 10.1063/1.1363694
[5]
Simin G, Koudymov A, Tarakji A, et al. Induced strain mechanism of current collapse in AlGaN-GaN heterostructure field-effect transistors. Appl Phys Lett, 2001, 79(16):2651 doi: 10.1063/1.1412282
[6]
Miller E J, Dang X Z, Wieder H H, et al. Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor. J Appl Phys, 2001, 87(11):8070
[7]
Xue F S. Trapping in AlGaN/GaN HFET. Research & Progress of SSE, 2007, 27(4):457
[8]
Bleaney B I, Bleaney B. Electricity and magnetism. 3rd ed. London:Oxford University Press, 1976
[9]
Yan D W, Lu H, Cao D S, et al. On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors. Appl Phys Lett, 2010, 97(16):153503
[10]
Anwar A F M, Webster R T, Kurt V S. Bias induced strain in AlGaN/GaN heterojunction field effect transistors and its implications. Appl Phys Lett, 2006, 88(20):203510 doi: 10.1063/1.2203739
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2278 Times PDF downloads: 15 Times Cited by: 0 Times

    History

    Received: 13 May 2012 Revised: 14 June 2012 Online: Published: 01 January 2013

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Dawei Yan, Fuxue Wang, Zhaomin Zhu, Jianmin Cheng, Xiaofeng Gu. Capacitance and conductance dispersion in AlGaN/GaN heterostructure[J]. Journal of Semiconductors, 2013, 34(1): 014003. doi: 10.1088/1674-4926/34/1/014003 D W Yan, F X Wang, Z M Zhu, J M Cheng, X F Gu. Capacitance and conductance dispersion in AlGaN/GaN heterostructure[J]. J. Semicond., 2013, 34(1): 014003. doi: 10.1088/1674-4926/34/1/014003.Export: BibTex EndNote
      Citation:
      Dawei Yan, Fuxue Wang, Zhaomin Zhu, Jianmin Cheng, Xiaofeng Gu. Capacitance and conductance dispersion in AlGaN/GaN heterostructure[J]. Journal of Semiconductors, 2013, 34(1): 014003. doi: 10.1088/1674-4926/34/1/014003

      D W Yan, F X Wang, Z M Zhu, J M Cheng, X F Gu. Capacitance and conductance dispersion in AlGaN/GaN heterostructure[J]. J. Semicond., 2013, 34(1): 014003. doi: 10.1088/1674-4926/34/1/014003.
      Export: BibTex EndNote

      Capacitance and conductance dispersion in AlGaN/GaN heterostructure

      doi: 10.1088/1674-4926/34/1/014003
      Funds:

      the Fundamental Research Funds for the Central Universities of China JUSRP111A42

      Project supported by the Fundamental Research Funds for the Central Universities of China (Nos.JUSRP111A42, JUSRP211A37, JUSRP20914, JUSRP11230), the State Key Laboratory of ASIC&System, China (No.11KF003), and the Natural Science Foundation of Jiangsu Province, China (No.BK2012110)

      the Natural Science Foundation of Jiangsu Province, China BK2012110

      the Fundamental Research Funds for the Central Universities of China JUSRP211A37

      the Fundamental Research Funds for the Central Universities of China JUSRP11230

      the State Key Laboratory of ASIC&System, China 11KF003

      the Fundamental Research Funds for the Central Universities of China JUSRP20914

      More Information
      • Corresponding author: Yan Dawei, Email:daweiyan@jiangnan.edu.cn
      • Received Date: 2012-05-13
      • Revised Date: 2012-06-14
      • Published Date: 2013-01-01

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return