J. Semicond. > 2008, Volume 29 > Issue 3 > 467-472

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Analysis and Modeling of Broadband CMOS Monolithic Balun up to Millimeter-Wave Frequencies

Xia Jun, Wang Zhigong, Wu Xiushan and Li Wei

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Abstract: The implementation of broadband monolithic baluns based on CMOS technology is investigated.The configuration and parameterized layout are analyzed.Then,a wide-band lumped element equivalent circuit model accounting for all necessary physical effects is proposed and model parameters are extracted,with high accuracy in a broadband frequency range,via combination of physical formula and fitting optimization.Two baluns were implemented with TSMC’s one-poly eight-metal (1P8M) 0.13μm mixed-signal (MS)/RF CMOS process.The S-parameters of these two baluns were measured using a vector network analyzer.The measured results agree well with the modeled parameters up to millimeter-wave frequencies.

Key words: modelingmillimeter-waveCMOS

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    Received: 18 August 2015 Revised: 29 October 2007 Online: Published: 01 March 2008

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      Xia Jun, Wang Zhigong, Wu Xiushan, Li Wei. Analysis and Modeling of Broadband CMOS Monolithic Balun up to Millimeter-Wave Frequencies[J]. Journal of Semiconductors, 2008, In Press. Xia J, Wang Z G, Wu X S, Li W. Analysis and Modeling of Broadband CMOS Monolithic Balun up to Millimeter-Wave Frequencies[J]. J. Semicond., 2008, 29(3): 467.Export: BibTex EndNote
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      Xia Jun, Wang Zhigong, Wu Xiushan, Li Wei. Analysis and Modeling of Broadband CMOS Monolithic Balun up to Millimeter-Wave Frequencies[J]. Journal of Semiconductors, 2008, In Press.

      Xia J, Wang Z G, Wu X S, Li W. Analysis and Modeling of Broadband CMOS Monolithic Balun up to Millimeter-Wave Frequencies[J]. J. Semicond., 2008, 29(3): 467.
      Export: BibTex EndNote

      Analysis and Modeling of Broadband CMOS Monolithic Balun up to Millimeter-Wave Frequencies

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-23
      • Revised Date: 2007-10-29
      • Published Date: 2008-02-28

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