SEMICONDUCTOR MATERIALS

Nano-indentation study on the (001) face of KDP crystal based on SPH method

Xiaoguang Guo, Ziyuan Liu, Hang Gao and Dongming Guo

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 Corresponding author: Ziyuan Liu, Email: lzy5307827@126.com

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Abstract: In order to avoid the defects of mesh distortion when dealing with large deformation problems through using the finite element method, a mess-free simulation method——smooth particle hydrodynamics (SPH) has been introduced. The material constitutive model of KDP crystal has been established based on the elastic-plastic theory. Then the nano-indentation on the (001) face of KDP crystal has been carried out using SPH method. Simulation results show that the maximum equivalent stress and the maximum plastic strain concentrate on the area that located near the tip of the indenter during the loading process. The distribution shape of Von Mises stress is similar to concentric circles. During the unloading process, no obvious variation of plastic strain distribution exists. The maximum Von Mises stress is mainly located at the indentation and its edge at the end of the unloading process. The approximate direct proportion relationship between the maximum indentation depth and the depth of the maximum Von Mises stress distribution has been discovered when the maximum load is lower than 8 mN. In addition, the nano-indentation experiments on KDP crystal's (001) face have been carried out. Both the material parameters and the adjusted stress-strain curve have been verified. The hindering role of the affected layer has been found and analyzed.

Key words: KDP crystal(001) facenano-indentationSPHnumerical simulation



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Fig. 1.  Kernel function.

Fig. 2.  Bucket sorting and neighbor searchŒ [18].

Fig. 3.  The sketch of Berkovich indenter.

Fig. 4.  3D modeling of KDP crystal’s nano-indentation.

Fig. 5.  The adjusted stress-strain curve.

Fig. 6.  The section view of nano-indentation.

Fig. 7.  (Color online) The distribution of Von Mises stress during the loading process.

Fig. 8.  (Color online) The distribution of Von Mises stress during the unloading process.

Fig. 9.  (Color online) The distribution of plastic strain under 8 mN maximum load.

Fig. 10.  The appearance of TriboIndenter.

Fig. 11.  The pressure-indentation depth curve under 8 mN.

Fig. 12.  The comparison of the maximum indentation depth.

Table 1.   Relevant material parameters of diamond.

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Table 2.   Relevant material parameters of KDP crystal’s (001) face.

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Table 3.   m, n and k under different maximum load.

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    Received: 27 December 2014 Revised: Online: Published: 01 August 2015

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      Xiaoguang Guo, Ziyuan Liu, Hang Gao, Dongming Guo. Nano-indentation study on the (001) face of KDP crystal based on SPH method[J]. Journal of Semiconductors, 2015, 36(8): 083007. doi: 10.1088/1674-4926/36/8/083007 X G Guo, Z Y Liu, H Gao, D M Guo. Nano-indentation study on the (001) face of KDP crystal based on SPH method[J]. J. Semicond., 2015, 36(8): 083007. doi: 10.1088/1674-4926/36/8/083007.Export: BibTex EndNote
      Citation:
      Xiaoguang Guo, Ziyuan Liu, Hang Gao, Dongming Guo. Nano-indentation study on the (001) face of KDP crystal based on SPH method[J]. Journal of Semiconductors, 2015, 36(8): 083007. doi: 10.1088/1674-4926/36/8/083007

      X G Guo, Z Y Liu, H Gao, D M Guo. Nano-indentation study on the (001) face of KDP crystal based on SPH method[J]. J. Semicond., 2015, 36(8): 083007. doi: 10.1088/1674-4926/36/8/083007.
      Export: BibTex EndNote

      Nano-indentation study on the (001) face of KDP crystal based on SPH method

      doi: 10.1088/1674-4926/36/8/083007
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      Project supported by the National Basic Research Program of China (No. 51135002), and the Science Fund for Creative Research Groups (No. 51321004).

      More Information
      • Corresponding author: Email: lzy5307827@126.com
      • Received Date: 2014-12-27
      • Accepted Date: 2015-03-16
      • Published Date: 2015-01-25

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