Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 197-199
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Effects of Growth Temperature Oil the InAIGaN Epilayer by RF-MBE

Wang Baozhu, Wang Xiaoliang, Wang Xiaoyan, Wang Xinhua, Guo Lunchun, Xiao Hongling, Wang Cuimei, Ran Junxue, Wang Junxi, Liu Hongxin and Li Jinmin

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Abstract: Single crystalline InAIGaN films are grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE).With the increase of growth temperature，the In content decreases，while the AI and Ga content increase.The InAIOaN grown at high temperature(600℃and 590℃)has some cracks on the surface.The surface of InAl.GaN grown at 580。C is very smoothing.There were SOme hillocks on the surface of InAIGaN film grown at 570℃.

Key words: RF-MBE, InAIGaN, XRD, RBS, SEM

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 197-199
      Wang Baozhu, Wang Xiaoliang, Wang Xiaoyan, Wang Xinhua, Guo Lunchun, Xiao Hongling, Wang Cuimei, Ran Junxue, Wang Junxi, Liu Hongxin, Li Jinmin. Effects of Growth Temperature Oil the InAIGaN Epilayer by RF-MBE[J]. Journal of Semiconductors, 2007, In Press. Wang B Z, Wang X L, Wang X Y, Wang X H, Guo L C, Xiao H L, Wang C M, Ran J X, Wang J X, Liu H X, Li J M. Effects of Growth Temperature Oil the InAIGaN Epilayer by RF-MBE[J]. Chin. J. Semicond., 2007, 28(S1): 197.Export: BibTex EndNote
      Citation:
      Wang Baozhu, Wang Xiaoliang, Wang Xiaoyan, Wang Xinhua, Guo Lunchun, Xiao Hongling, Wang Cuimei, Ran Junxue, Wang Junxi, Liu Hongxin, Li Jinmin. Effects of Growth Temperature Oil the InAIGaN Epilayer by RF-MBE[J]. Journal of Semiconductors, 2007, In Press.

      Wang B Z, Wang X L, Wang X Y, Wang X H, Guo L C, Xiao H L, Wang C M, Ran J X, Wang J X, Liu H X, Li J M. Effects of Growth Temperature Oil the InAIGaN Epilayer by RF-MBE[J]. Chin. J. Semicond., 2007, 28(S1): 197.
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      Effects of Growth Temperature Oil the InAIGaN Epilayer by RF-MBE

      • Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China and Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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