J. Semicond. > 2016, Volume 37 > Issue 6 > 064003, doi: 10.1088/1674-4926/37/6/064003
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SEMICONDUCTOR DEVICES

Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs

Pramod Kumar Tiwari, Mukesh Kumar, Ramavathu Sakru Naik and Gopi Krishna Saramekala

+ Author Affiliations

 Corresponding author: Pramod Kumar Tiwari, Email: tiwarip@nitrkl.ac.in

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Abstract: This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gate-all-around (GAA) MOSFETs. The important analog and RF performance parameters of SiNT FETs and GAA MOSFETs, namely drain current (Id), transconductance to drain current ratio (gm/Id), Ion/Ioff, the cut-off frequency (fT) and the maximum frequency of oscillation (fMAX) are evaluated with the help of Y- and H-parameters which are obtained from a 3-D device simulator, ATLASTM. It is found that the silicon-nanotube MOSFETs have far more superior analog and RF characteristics (gm/Id, fT and fMAX) compared to the nanowire-based gate-all-around GAA MOSFETs. The silicon-nanotube MOSFET shows an improvement of~2.5 and 3 times in the case of fT and fMAX values respectively compared with the nanowire-based gate-all-around (GAA) MOSFET.

Key words: analog and RF, SiNT MOSFETs, GAA MOSFETs, unity gain frequency, unity power frequency



[1]
Yan H, Choe H S, Nam S, et al. Programmable nanowire circuits for nanoprocessors. Nature Lett, 2011, 470:240
[2]
Li M, Yeo K H, Suk S D, et al. Sub-10 nm gate-all-around CMOS nanowire transistors on bulk Si substrate. IEEE VLSI Technol Symp, 2009:94
[3]
Gates B D. Nanowires find their place. Nature Nano Technol, 2010, 5:484
[4]
Fahad H M, Hussain M M. Are nanotube architectures more advantageous than nanowire architectures for field effect transistors. Sci Report, 2012, 2:475
[5]
Tekleab D. Device performance of silicon nano tube field effect transistors. IEEE Electron Device Lett, 2014, 35(5):506
[6]
Fahad H M, Smith C E, Rojas J P, et al. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits. Nano Lett, 2011, 11(10):4393
[7]
Tekleab D, Tran H H, Sleight J W, et al. Silicon nanotube MOSFET. US Patent 20120217468, 2012
[8]
ATLAS, A 3D device simulator from SILVACO, Singapore 2014
[9]
Kumar N M, Sayamal B, Sarkar C K. Influence of channel and gate engineering on the analog and RF performance of DG MOSFET. IEEE Trans Electron Device, 2010, 57(4):820
Fig. 1.  (a) 3D-structure of a SiNT FET. Channel length = 20 nm,channel thickness = 10 nm,source length = drain length = 10 nm and inner core gate diameter = 10 nm.(b) Cross-section view of SiNT FET showing position of inner core gate.(c) Top view of SiNT FET showing position of SiO2 layer.

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Fig. 2.  (a) 3D-structure of a GAA FET. Channel length = 20 nm,channel thickness = 20 nm,source length = drain length = 10 nm.(b) Cross-section view of GAA FET. (c) Top view of GAA FET showing position of SiO2 layer.

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Fig. 3.  (a) Comparison of\,transfer (Id -Vgs) characteristics of SiNT FET and GAA FET,where Id = drain current,Vgs = gate voltage and Vds = drain voltage.(b) Comparison of drain (Id -Vds) characteristics of SiNT FET and GAA FET.

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Fig. 4.  Channel thickness dependence of the Ion/Ioff ratio of SiNT FET for different channel lengths.

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Fig. 5.  Comparison of gm /Id versus Id of SiNT FET and GAA. Here Vds = Vgs = 1 V,channel length = 20 nm,channel thickness = 10 nm,source length = drain length = 10 nm,fi= 1 GHz and work function = 4.7 eV for SiNT FET and 4.639 eV for GAA to match threshold voltage.

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Fig. 6.  (a) Comparison of cut-off frequency (fT) curve of SiNT FET and GAA. Here Vds =Vgs = 1 V,channel length = 20 nm,channel thickness = 10 nm,source length = drain length = 10 nm,fi =1 GHz and work function = 4.7 eV for SiNT FET and 4.639 eV for GAA to match threshold voltage.

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Fig. 7.  (a) Comparison of cut-off frequency (fT) versus channel thickness (t) for SiNT FET and GAA. Here Vds =Vgs = 1 V,channel length = 20 nm,channel thickness (t) = 5,10,15,20 nm,source length = drain length = 10 nm and fi = 1 GHz.(b) Comparison of maximum frequency of oscillation (fMAX) versus channel thickness (t) for SiNT FET and GAA. Same data as above is used.

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Table 1.   Channel thicknesses and their corresponding work functions used for simulation.

Channel thickness (nm)5101520
Work function (eV)SiNT FET4.594.74.7934.915
GAA4.61894.74.8084.917
DownLoad: CSV
[1]
Yan H, Choe H S, Nam S, et al. Programmable nanowire circuits for nanoprocessors. Nature Lett, 2011, 470:240
[2]
Li M, Yeo K H, Suk S D, et al. Sub-10 nm gate-all-around CMOS nanowire transistors on bulk Si substrate. IEEE VLSI Technol Symp, 2009:94
[3]
Gates B D. Nanowires find their place. Nature Nano Technol, 2010, 5:484
[4]
Fahad H M, Hussain M M. Are nanotube architectures more advantageous than nanowire architectures for field effect transistors. Sci Report, 2012, 2:475
[5]
Tekleab D. Device performance of silicon nano tube field effect transistors. IEEE Electron Device Lett, 2014, 35(5):506
[6]
Fahad H M, Smith C E, Rojas J P, et al. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits. Nano Lett, 2011, 11(10):4393
[7]
Tekleab D, Tran H H, Sleight J W, et al. Silicon nanotube MOSFET. US Patent 20120217468, 2012
[8]
ATLAS, A 3D device simulator from SILVACO, Singapore 2014
[9]
Kumar N M, Sayamal B, Sarkar C K. Influence of channel and gate engineering on the analog and RF performance of DG MOSFET. IEEE Trans Electron Device, 2010, 57(4):820

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    Received: 29 August 2015 Revised: 17 December 2015 Online: Published: 01 June 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(6): 064003
      Pramod Kumar Tiwari, Mukesh Kumar, Ramavathu Sakru Naik, Gopi Krishna Saramekala. Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs[J]. Journal of Semiconductors, 2016, 37(6): 064003. doi: 10.1088/1674-4926/37/6/064003 P K Tiwari, M Kumar, R S Naik, G K Saramekala. Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs[J]. J. Semicond., 2016, 37(6): 064003. doi: 10.1088/1674-4926/37/6/064003.Export: BibTex EndNote
      Citation:
      Pramod Kumar Tiwari, Mukesh Kumar, Ramavathu Sakru Naik, Gopi Krishna Saramekala. Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs[J]. Journal of Semiconductors, 2016, 37(6): 064003. doi: 10.1088/1674-4926/37/6/064003

      P K Tiwari, M Kumar, R S Naik, G K Saramekala. Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs[J]. J. Semicond., 2016, 37(6): 064003. doi: 10.1088/1674-4926/37/6/064003.
      Export: BibTex EndNote
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      Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs

      doi: 10.1088/1674-4926/37/6/064003

      • Department of Electronics and Communication Engineering, National Institute of Technology, Rourkela-769008, Odisha, India

      Funds:

      the Defence Research and Development Organisation (DRDO), Ministry of Defence, Govt. of India No.CC/TM/ERIPR/GIA/1516/020

      Project supported by the Defence Research and Development Organisation (DRDO), Ministry of Defence, Govt. of India (No.CC/TM/ERIPR/GIA/1516/020).

      More Information
      • Corresponding author: Email: tiwarip@nitrkl.ac.in
      • Received Date: 2015-08-29
      • Revised Date: 2015-12-17
      • Published Date: 2016-06-01

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