SEMICONDUCTOR INTEGRATED CIRCUITS

A low power 3–5 GHz CMOS UWB receiver front-end

Li Weinan, Huang Yumei and Hong Zhiliang

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Abstract: A novel low power RF receiver front-end for 3–5 GHz UWB is presented. Designed in the 0.13 μm CMOS process, the direct conversion receiver features a wideband balun-coupled noise cancelling transconductance input stage, followed by quadrature passive mixers and transimpedance loading amplifiers. Measurement results show that the receiver achieves an input return loss below 8.5 dB across the 3.1–4.7 GHz frequency range, max-imum voltage conversion gain of 27 dB, minimum noise figure of 4 dB, IIP3 of –11.5 dBm, and IIP2 of 33 dBm. Working under 1.2 V supply voltage, the receiver consumes total current of 18 mA including 10 mA by on-chip quadrature LO signal generation and buffer circuits. The chip area with pads is 1.1 × 1.5 mm2.

Key words: UWB direct-conversion receiver low power RF CMOS passive mixer

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    Received: 18 August 2015 Revised: 18 October 2008 Online: Published: 01 March 2009

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      Li Weinan, Huang Yumei, Hong Zhiliang. A low power 3–5 GHz CMOS UWB receiver front-end[J]. Journal of Semiconductors, 2009, 30(3): 035005. doi: 10.1088/1674-4926/30/3/035005 Li W N, Huang Y M, Hong Z L. A low power 3–5 GHz CMOS UWB receiver front-end[J]. J. Semicond., 2009, 30(3): 035005. doi:  10.1088/1674-4926/30/3/035005.Export: BibTex EndNote
      Citation:
      Li Weinan, Huang Yumei, Hong Zhiliang. A low power 3–5 GHz CMOS UWB receiver front-end[J]. Journal of Semiconductors, 2009, 30(3): 035005. doi: 10.1088/1674-4926/30/3/035005

      Li W N, Huang Y M, Hong Z L. A low power 3–5 GHz CMOS UWB receiver front-end[J]. J. Semicond., 2009, 30(3): 035005. doi:  10.1088/1674-4926/30/3/035005.
      Export: BibTex EndNote

      A low power 3–5 GHz CMOS UWB receiver front-end

      doi: 10.1088/1674-4926/30/3/035005
      • Received Date: 2015-08-18
      • Accepted Date: 2008-08-28
      • Revised Date: 2008-10-18
      • Published Date: 2009-03-12

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