Fig. 1.
Cross sections of the sSJTAC and the TAC-IGBT.
DownLoad:
| Citation: |
Binghua Li, Frank X. C. Jiang, Zhigui Li, Xinnan Lin. A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure[J]. Journal of Semiconductors, 2013, 34(12): 124001. doi: 10.1088/1674-4926/34/12/124001
B H Li, F X C Jiang, Z G Li, X N Lin. A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure[J]. J. Semicond., 2013, 34(12): 124001. doi: 10.1088/1674-4926/34/12/124001.
Export: BibTex EndNote
|
A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure
doi: 10.1088/1674-4926/34/12/124001
More Information-
Abstract
A high performance trench insulated gate bipolar transistor which combines a semi-superjunction structure and an accumulation channel (sSJTAC-IGBT) is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage (BV), a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area (SCSOA) and reduces the energy loss during the turn-off process.-
Keywords:
- accumulation channel,
- semi-superjunction structure,
- BV,
- SCSOA
-
References
[1] Khanna V K. The insulated gate bipolar transistor (IGBT) theory and design. 1st ed. Canada:Institute of Electrical and Electronics Engineers, 2003[2] Takahashi H, Haruguchi H, Hagino H, et al. Carrier stored trench gate bipolar transistor (CSTBT)——a novel power device for high voltage application. ISPSD, 1996:349 http://ieeexplore.ieee.org/document/509513/[3] Wang Bo, Tan Jingfei, Zhang Wenliang, et al. A simulation study on a novel trench SJIGBT. Journal of Semiconductors, 2012, 33(11):114002 doi: 10.1088/1674-4926/33/11/114002[4] Jiang Huaping, Wei Jin, Zhang Bo, et al. Band-to-band tunneling injection insulated-gate bipolar transistor with a soft reverse-recovery built-in diode. IEEE Electron Device Lett, 2012, 33(12):1684 doi: 10.1109/LED.2012.2219612[5] Li Zehong, Qian Mengliang, Zhang Bo. TAC-IGBT:an improved IGBT structure. ISPSD, 2009:124 http://ieeexplore.ieee.org/document/5158017/?reload=true&arnumber=5158017&punumber%3D5116067[6] Qian Mengliang, Li Zehong, Zhang Bo, et al. Insulated gate bipolar transistor with trench gate structure of accumulation channel. Journal of Semiconductors, 2010, 31(3):034002 doi: 10.1088/1674-4926/31/3/034002[7] Bobde M D, Baliga B J. Silicon planar ACCUFET improved power MOSFET structure. Electron Lett, 2000, 36:913 doi: 10.1049/el:20000647[8] Qian Mengliang, Li Zehong, Zhang Bo, et al. Trench gate IGBT structure with floating P region. Journal of Semiconductors, 2010, 31(2):024003 doi: 10.1088/1674-4926/31/2/024003[9] Baliga B J. Power semiconductor devices. Boston:PWS Publishing Co, 1996[10] Fujihira T. Theory of semiconductor superjunction devices. Jpn J Appl Phys, 1997, 36(10):6254 doi: 10.1143/JJAP.36.6254/meta;jsessionid=BF604420DCD5769E98481879482C215E.c2.iopscience.cld.iop.org[11] Fujihira T. Simulated superior performances of semiconductor superjunction devices. ISPSD, 1998:423 http://ieeexplore.ieee.org/document/702736/[12] Lorenz L, Deboy G, Knapp A, et al. CoolMOS-A new milestone in high voltage power MOS. ISPSD, 1999:3 https://www.researchgate.net/publication/3797528_CoolMOS_-_a_new_milestone_in_high_voltage_power_MOS[13] Oh K H, Lee J, Lee K H, et al. A simulation study on novel field stop IGBTs using superjunction. IEEE Trans Electron Devices, 2006, 53(4):884 doi: 10.1109/TED.2006.870278[14] Antoniou M, Udrea F, Bauer F, et al. The semi-superjunction IGBT. IEEE Electron Device Lett, 2010, 31(6):591 doi: 10.1109/LED.2010.2046132[15] Sentaurus TCAD Manuals. Synopsys Inc, 2011[16] Wang Y, Chen X. A novel super-junction IGBT and its unique conducting mechanism. Research & Progress of Solid State Electronics, 2011, 31(6):545 http://en.cnki.com.cn/Article_en/CJFDTOTAL-GTDZ201106007.htm -
Proportional views
