SEMICONDUCTOR DEVICES

Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure

Binglei Fu, Naixin Liu, Zhe Liu, Jinmin Li and Junxi Wang

+ Author Affiliations

 Corresponding author: Fu Binglei, Email:fubinglei@semi.ac.cn

PDF

Abstract: The advantages of InGaN/GaN light emitting diodes (LEDs) with p-GaN grown under high pressures are studied. It is shown that the high growth pressure could lead to better electronic properties of p-GaN layers due to the eliminated compensation effect. The contact resistivity of p-GaN layers are decreased due to the reduced donor-like defects on the p-GaN surface. The leakage current is also reduced, which may be induced by the better filling of V-defects with p-GaN layers grown under high pressures. The LED efficiency thus could be enhanced with high pressure grown p-GaN layers.

Key words: light emitting diodesV-defectsgrowth pressurep-GaN



[1]
Meyaard D S, Lin G B, Shan Q, et al. Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes. Appl Phys Lett, 2011, 99(25):251115 doi: 10.1063/1.3671395
[2]
Le L C, Zhao D G, Jiang D S, et al. Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes. Appl Phys Lett, 2012, 101(25):252110 doi: 10.1063/1.4772548
[3]
Lee W, Limb J, Ryou J H, et al. Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes. J Electron Mater, 2006, 35(4):587 doi: 10.1007/s11664-006-0104-2
[4]
Fu B, Liu N, Zhang N, et al. The effect of growth pressure and growth rate on the properties of Mg-doped GaN. J Electron Mater, 2014, DOI: 10.1007/s11664-014-3005-9
[5]
Ratsch C, Garcia J, Caflisch R E. Influence of edge diffusion on the growth mode on vicinal surfaces. Appl Phys Lett, 2005, 87(14):141901 doi: 10.1063/1.2077851
[6]
Wang L C, Guo E Q, Liu Z Q, et al. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface. Journal of Semiconductors, 2011, 32(2):024009 doi: 10.1088/1674-4926/32/2/024009
[7]
Liu L, Ling M, Yang J, et al. Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure. J Appl Phys, 2012, 111(9):093110 doi: 10.1063/1.4712030
[8]
Oh M S, Kwon M K, Park I K, et al. Improvement of green LED by growing p-GaN on In0.25GaN/GaN MQWs at low temperature. J Cryst Growth, 2006, 289(1):107 doi: 10.1016/j.jcrysgro.2005.10.129
[9]
Ji Y, Zhang Z H, Kyaw Z, et al. Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes. Appl Phys Lett, 2013, 103(5):053512 doi: 10.1063/1.4817381
Fig. 1.  AFM images with 5 $\times $ 5 $\mu $m$^{2}$ scans of LED samples with p-GaN grown at (a) 130 Torr and (b) 400 Torr.

Fig. 2.  (a) Forward $I$-$V$ curves, (b) forward log $I$-$V$ curves and (c) reverse $I$-$V$ curves of LED samples with p-GaN grown at different pressures (130 Torr in black and 400 Torr in red).

Fig. 3.  (a) The HRXRD $\omega $/2$\theta $ spectra of LED samples with p-GaN grown at different pressures. The XRD reciprocal space maps of LED samples with p-GaN grown under (b) 130 Torr and (c) 400 Torr.

Fig. 4.  The EQE as a function of current for LED samples with p-GaN grown at different pressures.

Table 1.   Results of RT-Hall measurement.

Table 2.   RSM roughness of LED surface and specific contact resistivity of ohmic contact on p-GaN.

[1]
Meyaard D S, Lin G B, Shan Q, et al. Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes. Appl Phys Lett, 2011, 99(25):251115 doi: 10.1063/1.3671395
[2]
Le L C, Zhao D G, Jiang D S, et al. Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes. Appl Phys Lett, 2012, 101(25):252110 doi: 10.1063/1.4772548
[3]
Lee W, Limb J, Ryou J H, et al. Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes. J Electron Mater, 2006, 35(4):587 doi: 10.1007/s11664-006-0104-2
[4]
Fu B, Liu N, Zhang N, et al. The effect of growth pressure and growth rate on the properties of Mg-doped GaN. J Electron Mater, 2014, DOI: 10.1007/s11664-014-3005-9
[5]
Ratsch C, Garcia J, Caflisch R E. Influence of edge diffusion on the growth mode on vicinal surfaces. Appl Phys Lett, 2005, 87(14):141901 doi: 10.1063/1.2077851
[6]
Wang L C, Guo E Q, Liu Z Q, et al. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface. Journal of Semiconductors, 2011, 32(2):024009 doi: 10.1088/1674-4926/32/2/024009
[7]
Liu L, Ling M, Yang J, et al. Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure. J Appl Phys, 2012, 111(9):093110 doi: 10.1063/1.4712030
[8]
Oh M S, Kwon M K, Park I K, et al. Improvement of green LED by growing p-GaN on In0.25GaN/GaN MQWs at low temperature. J Cryst Growth, 2006, 289(1):107 doi: 10.1016/j.jcrysgro.2005.10.129
[9]
Ji Y, Zhang Z H, Kyaw Z, et al. Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes. Appl Phys Lett, 2013, 103(5):053512 doi: 10.1063/1.4817381
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2519 Times PDF downloads: 26 Times Cited by: 0 Times

    History

    Received: 21 March 2014 Revised: 06 May 2014 Online: Published: 01 November 2014

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Binglei Fu, Naixin Liu, Zhe Liu, Jinmin Li, Junxi Wang. Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure[J]. Journal of Semiconductors, 2014, 35(11): 114007. doi: 10.1088/1674-4926/35/11/114007 B L Fu, N X Liu, Z Liu, J M Li, J X Wang. Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure[J]. J. Semicond., 2014, 35(11): 114007. doi: 10.1088/1674-4926/35/11/114007.Export: BibTex EndNote
      Citation:
      Binglei Fu, Naixin Liu, Zhe Liu, Jinmin Li, Junxi Wang. Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure[J]. Journal of Semiconductors, 2014, 35(11): 114007. doi: 10.1088/1674-4926/35/11/114007

      B L Fu, N X Liu, Z Liu, J M Li, J X Wang. Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure[J]. J. Semicond., 2014, 35(11): 114007. doi: 10.1088/1674-4926/35/11/114007.
      Export: BibTex EndNote

      Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure

      doi: 10.1088/1674-4926/35/11/114007
      More Information
      • Corresponding author: Fu Binglei, Email:fubinglei@semi.ac.cn
      • Received Date: 2014-03-21
      • Revised Date: 2014-05-06
      • Published Date: 2014-11-01

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return