| Citation: |
Xu Mingzhen, Tan Changhua, He Yandong, Duan Xiaorong. Conductivity to Soft Failure of N-O-Si Thin Film Used in Nanometer Device[J]. Journal of Semiconductors, 2005, In Press.
Xu M Z, Tan C H, He Y and o N, Duan X R. Conductivity to Soft Failure of N-O-Si Thin Film Used in Nanometer Device[J]. Chin. J. Semicond., 2005, 26(13): 126.
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Conductivity to Soft Failure of N-O-Si Thin Film Used in Nanometer Device
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Abstract
The properties of conductivity at soft failure are studied under constant voltage stress.It is experimentally shown that the logarithm of the conductivity as well as time-to-breakdown follows a reciprocal temperature dependence and a single path conductivity- and time-to-breakdown are also strongly correlated,and obey a simple reci- symmetrical law.They can be explained by stress induced defect conduction mechanism -
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