SEMICONDUCTOR TECHNOLOGY

A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate

Shiyan Fan1, 2, Enhai Liu2, Jun Zhang2, Yuling Liu1, , Lei Wang3, Kai Lin2, Ming Sun1 and Lukui Shi2

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 Corresponding author: Liu Yuling, LiuYL@jingling.com.cn

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Abstract: The influence of the components of an alkali polishing slurry and the mutual influences on the Cu polishing rate were investigated by a CMP polishing rate prediction model established with a modified artificial neural network based on the artificial bee colony algorithm. The quantitative method of sensitivity analysis was employed to fulfill the purpose of quantizing the influence on the polishing rate. The result of the analysis indicates that under certain CMP conditions, the Cu polishing rate was controlled by the silica abrasives, the FA/O chelating agent, the surfactant and the oxidant agent in the polishing slurry. Such factors showed the different sensitivity coefficients with 0.78, 0.53, 0.29 and 0.19 respectively on all the sample points. The mutual influence between the FA/O chelating agent and the oxidant agent on the polishing rate seemed obviously strongest when the proportion of them was 2 to 7, with the global sensitivity coefficients between 5 to 9; the mutual influence of silica abrasives and oxidant on the polishing rate was greater as the proportion of the above additives was beyond 5, with the global sensitivity coefficients between 2.5 and 6; the mutual influence of the surfactant and oxidant on the polishing rate was not obvious, with global sensitivity coefficients less than 3. Thus, it provides a kind of effective method for quantitating the influence with the components of the CMP alkali slurry on the polishing rate.

Key words: polishing slurrypolishing ratesensitivity analysisartificial neural networkartificial bee colony algorithm



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.  The structure diagram of the model.

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Fig2.  The predicted and the actual values of the model.

Fig3.  The prediction error of the model.

Fig4.  The sensitivity coefficients of each component in the polishing liquid.

Fig5.  The mutual influence of the abrasives and oxidant on the polishing rate.

Fig6.  The mutual influence of the chelating agent and oxidant on the polishing rate.

Fig7.  The mutual influence of the surfactant and oxidant on the polishing rate.

Table 1.   CMP process conditions.

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Table 2.   The training samples of the model.

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Table 3.   The test samples of the model.

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    Received: 08 February 2015 Revised: Online: Published: 01 September 2015

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      Shiyan Fan, Enhai Liu, Jun Zhang, Yuling Liu, Lei Wang, Kai Lin, Ming Sun, Lukui Shi. A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate[J]. Journal of Semiconductors, 2015, 36(9): 096001. doi: 10.1088/1674-4926/36/9/096001 S Y Fan, E H Liu, J Zhang, Y L Liu, L Wang, K Lin, M Sun, L K Shi. A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate[J]. J. Semicond., 2015, 36(9): 096001. doi: 10.1088/1674-4926/36/9/096001.Export: BibTex EndNote
      Citation:
      Shiyan Fan, Enhai Liu, Jun Zhang, Yuling Liu, Lei Wang, Kai Lin, Ming Sun, Lukui Shi. A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate[J]. Journal of Semiconductors, 2015, 36(9): 096001. doi: 10.1088/1674-4926/36/9/096001

      S Y Fan, E H Liu, J Zhang, Y L Liu, L Wang, K Lin, M Sun, L K Shi. A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate[J]. J. Semicond., 2015, 36(9): 096001. doi: 10.1088/1674-4926/36/9/096001.
      Export: BibTex EndNote

      A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate

      doi: 10.1088/1674-4926/36/9/096001
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      Project supported by the Special Project Items No. 2 in National Long-Term Technology Development Plan, China (No. 2009ZX02308) and the Natural Science Foundation of Hebei Province, China (No. F2013202104).

      More Information
      • Corresponding author: Liu Yuling, LiuYL@jingling.com.cn
      • Received Date: 2015-02-08
      • Accepted Date: 2015-03-17
      • Published Date: 2015-01-25

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