| Citation: |
Wang Yinsheng, Li Xiangguang, Fu Yizhu, Wang Dianli, Ding Xiaoming, Sheng Guoxing, Kang Xiaohu. 1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors[J]. Journal of Semiconductors, 2008, In Press.
Wang Y S, Li X G, Fu Y Z, Wang D L, Ding X M, Sheng G X, Kang X H. 1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors[J]. J. Semicond., 2008, 29(5): 965.
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1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors
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Abstract
Using novel technologies such as the mesa junction termination structure with one guard ring and a nonlinear blasting resistor of microwave power transistors,a high L-band medium silicon pulse power transistor has been developed.Under 40V supply voltage,internally matched devices cover the frequency for high L-band radar applications from 1.46~1.66GHz with a pulsed output power of 250W and 45% collector efficiency.The gain is more than 7.0dB.-
Keywords:
- silicon,
- microwave,
- power transistor
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References
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Proportional views
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