Chin. J. Semicond. > 2006, Volume 27 > Issue 5 > 830-833

PAPERS

Quantum Well Under an External Electric Field

Zhao Fengqi and Sarula

+ Author Affiliations

PDF

Abstract: The ground state and binding energy of a hydrogenic impurity as functions of the electric field and well width in a GaAs/AlxGa1-xAs PQW are investigated with the variational method.The effects of spatial dependent effective mass and spatial dependent dielectric constant are considered in the calculation.The results indicate that the effects of the external electric field on the ground state and binding energy of the hydrogenic impurity are noticeable,and they increase with increasing well width.The effects of the spatial dependent effective mass and spatial dependent dielectric constant make the ground state energy decrease and the binding energy increase.These effects decrease with increasing well width.

Key words: parabolic quantum wellhydrogenic impurityexternal electric fieldbinding energy

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2956 Times PDF downloads: 1728 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 May 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhao Fengqi, Sarula. Quantum Well Under an External Electric Field[J]. Journal of Semiconductors, 2006, In Press. Zhao F Q, Sa R L. Quantum Well Under an External Electric Field[J]. Chin. J. Semicond., 2006, 27(5): 830.Export: BibTex EndNote
      Citation:
      Zhao Fengqi, Sarula. Quantum Well Under an External Electric Field[J]. Journal of Semiconductors, 2006, In Press.

      Zhao F Q, Sa R L. Quantum Well Under an External Electric Field[J]. Chin. J. Semicond., 2006, 27(5): 830.
      Export: BibTex EndNote

      Quantum Well Under an External Electric Field

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return