Chin. J. Semicond. > 2003, Volume 24 > Issue 6 > 637-642

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双层多晶硅FLOTOX EEPROM特性的模拟和验证

黄飞鸿 , 郑国祥 and 吴瑞

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Key words: FLOTOX EEPROM, 阈值电压, 写入, 隧道氧化层

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2003

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      • Received Date: 2015-08-20

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