Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals

Zhang Xiaoying; Chen Songyan; Lai Hongkai; Li Cheng; Yu Jinzhong

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Article Navigation > Journal of Semiconductors > 2007 > 28(2): 213-216

Zhang Xiaoying, Chen Songyan, Lai Hongkai, Li Cheng, Yu Jinzhong. Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals[J]. Journal of Semiconductors, 2007, In Press. Zhang X Y, Chen S Y, Lai H K, Li C, Yu J Z. Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals[J]. Chin. J. Semicond., 2007, 28(2): 213.Export: BibTex EndNote

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Zhang Xiaoying, Chen Songyan, Lai Hongkai, Li Cheng, Yu Jinzhong. Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals[J]. Journal of Semiconductors, 2007, In Press.

Zhang X Y, Chen S Y, Lai H K, Li C, Yu J Z. Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals[J]. Chin. J. Semicond., 2007, 28(2): 213.

Export: BibTex EndNote

Citation:

Zhang Xiaoying, Chen Songyan, Lai Hongkai, Li Cheng, Yu Jinzhong. Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals[J]. Journal of Semiconductors, 2007, In Press.

Zhang X Y, Chen S Y, Lai H K, Li C, Yu J Z. Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals[J]. Chin. J. Semicond., 2007, 28(2): 213.

Export: BibTex EndNote

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Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals

Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China
Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China
Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China
Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China
Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China
State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

Received Date: 2015-08-18
Accepted Date: 2006-07-07
Revised Date: 2006-11-07
Published Date: 2007-01-30

Abstract

Abstract

Si/Si bonding has been achieved at low temperatures by introducing Ti/Au layers.The bonding temperature can be reduced to 414℃.The Si/Si bonding strength has been investigated by tensile strength.The results show that the bonding strength exceeds 1.27MPa.I-V tests show that the interface of Si/Ti/Au/Ti/Si is an ohmic contact,and XPS tests indicate that the interface mainly comprises Si-Au eutectic alloy.Different experiments by annealing at gradually changing temperature show that the higher the bonding temperature is,the stronger the bonding energy is.In addition,annealing at gradually changing temperature is propitious to increase bonding strength.
- wafer bonding,
- interface characteristic,
- intermediate metals,
- bonding mechanism

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