| Citation: |
Wang Maojun, Shen Bo, Wang Yan, Huang Sen, Xu Fujun, Xu Jian, Yang Zhijian, Zhang Guoyi. High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures[J]. Journal of Semiconductors, 2007, In Press.
Wang M J, Shen B, Wang Y, Huang S, Xu F J, Xu J, Yang Z J, Zhang G Y. High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures[J]. Chin. J. Semicond., 2007, 28(S1): 376.
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High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures
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Abstract
Temperature dependence of the transport characteristics of GaN and Al0.18 Ga0.82 N/GaN heterostructures are investigated by means of high temperature Hall measurements from room temperature to 500℃.The increment of electron concentration in GaN layer is found to be direct proportion to the density of dislocations in GaN layer.It is found that the 2DEG density decreases with increasing temperature from room temperature to 250℃.and then changes to increase with in· creasing temperature at higher temperatures.It is thought that the decrease of the 2DEG density from room temperature to 250℃is caused by the reduction of the conduction band offset at high temperatures.The result is consistent with the theoretical calculation.-
Keywords:
- GaN,
- AIxGa1-xN/GaN,
- dislocation,
- Hall,
- high temperature
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References
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Proportional views
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