| Citation: |
Omeime Xerviar Esebamen, Göran Thungström, Hans-Erik Nilsson. A different approach for determining the responsivity of n+p detectors using scanning electron microscopy[J]. Journal of Semiconductors, 2012, 33(7): 074002. doi: 10.1088/1674-4926/33/7/074002
O X Esebamen, G Thungstrom, H E Nilsson. A different approach for determining the responsivity of n+p detectors using scanning electron microscopy[J]. J. Semicond., 2012, 33(7): 074002. doi: 10.1088/1674-4926/33/7/074002.
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A different approach for determining the responsivity of n+p detectors using scanning electron microscopy
doi: 10.1088/1674-4926/33/7/074002
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Abstract
This paper explores an alternative to the standard method of studying the responsivities (the input--output gain) and other behaviours of detectors at low electron energy. The research does not aim to compare the results of differently doped n+p detectors; its purpose is to provide an alternative characterization method (using scanning electron microscopy) to those used in previous studies on the responsivity of n+p doped detectors as a function of the electron radiation energy and other interface parameters.-
Keywords:
- scanning electron microscopy,
- responsivity,
- n+p detector
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] -
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