SEMICONDUCTOR DEVICES

Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs

Yuan Tingting, Liu Xinyu, Zheng Yingkui, Li Chengzhan, Wei Ke and Liu Guoguo

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Abstract: Surface treatment plays an important role in the process of making high performance AlGaN/GaN HEMTs. A clean surface is critical for enhancing device performance and long-term reliability. By experimenting with different surface treatment methods, we find that using UV/ozone treatment significantly influences the electrical properties of Ohmic contacts and Schottky contacts. According to these experimental phenomena and X-ray photoelectron spectroscopy surface analysis results, the effect of the UV/ozone treatment and the reason that it influences the Ohmic/Schottky contact characteristics of AlGaN/GaN HEMTs is investigated.

Key words: AlGaN/GaN HEMT

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    Received: 18 August 2015 Revised: 17 July 2009 Online: Published: 01 December 2009

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      Yuan Tingting, Liu Xinyu, Zheng Yingkui, Li Chengzhan, Wei Ke, Liu Guoguo. Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2009, 30(12): 124001. doi: 10.1088/1674-4926/30/12/124001 Yuan T T, Liu X Y, Zheng Y K, Li C Z, Wei K, Liu G G. Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs[J]. J. Semicond., 2009, 30(12): 124001. doi: 10.1088/1674-4926/30/12/124001.Export: BibTex EndNote
      Citation:
      Yuan Tingting, Liu Xinyu, Zheng Yingkui, Li Chengzhan, Wei Ke, Liu Guoguo. Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2009, 30(12): 124001. doi: 10.1088/1674-4926/30/12/124001

      Yuan T T, Liu X Y, Zheng Y K, Li C Z, Wei K, Liu G G. Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs[J]. J. Semicond., 2009, 30(12): 124001. doi: 10.1088/1674-4926/30/12/124001.
      Export: BibTex EndNote

      Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs

      doi: 10.1088/1674-4926/30/12/124001
      • Received Date: 2015-08-18
      • Accepted Date: 2009-06-16
      • Revised Date: 2009-07-17
      • Published Date: 2009-12-04

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