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A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

Ge Qin, Chen Xiaojuan, Luo Weijun, Yuan Tingting, Pang Lei and Liu Xinyu

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Abstract: A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3 μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating (SI) 4H-SiC substrate by MOCVD. Over the 12–14 GHz frequency range, the single chip amplifier demonstrates a maximum power of 38 dBm (6.3 W), a peak power added efficiency (PAE) of 24.2% and linear gain of 6.4 to 7.5 dB under a 10% duty pulse condition when operated at Vds = 25 V and Vgs = –4 V. At these power levels, the amplifier exhibits a power density in excess of 5 W/mm.

Key words: Ku-bandAlGaN/GaN HEMTspower amplifiermonolithicpower density

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    Received: 18 August 2015 Revised: 08 April 2011 Online: Published: 01 August 2011

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      Ge Qin, Chen Xiaojuan, Luo Weijun, Yuan Tingting, Pang Lei, Liu Xinyu. A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier[J]. Journal of Semiconductors, 2011, 32(8): 085001. doi: 10.1088/1674-4926/32/8/085001 Ge Q, Chen X J, Luo W J, Yuan T T, Pang L, Liu X Y. A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier[J]. J. Semicond., 2011, 32(8): 085001. doi: 10.1088/1674-4926/32/8/085001.Export: BibTex EndNote
      Citation:
      Ge Qin, Chen Xiaojuan, Luo Weijun, Yuan Tingting, Pang Lei, Liu Xinyu. A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier[J]. Journal of Semiconductors, 2011, 32(8): 085001. doi: 10.1088/1674-4926/32/8/085001

      Ge Q, Chen X J, Luo W J, Yuan T T, Pang L, Liu X Y. A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier[J]. J. Semicond., 2011, 32(8): 085001. doi: 10.1088/1674-4926/32/8/085001.
      Export: BibTex EndNote

      A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

      doi: 10.1088/1674-4926/32/8/085001
      Funds:

      The National Basic Research Program of China (973 Program)

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      • Received Date: 2015-08-18
      • Accepted Date: 2011-03-01
      • Revised Date: 2011-04-08
      • Published Date: 2011-07-19

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