Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1097-1101

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Key words: InGaAs, 分子束外延, 高应变, 量子阱激光器

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

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      • Received Date: 2015-08-20

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