SEMICONDUCTOR DEVICES

Simulation study of new 3-terminal devices for high speed STT-RAM

Zhang Shuchao, Hu Jiangfeng, Chen Peiyi and Deng Ning

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Abstract: To improve the performance of spin transfer torque random access memory (STT-RAM), especially writing speed, we propose three modified 3-terminal STT-RAM cells. A magnetic dynamic process in the new structures was investigated through micro-magnetic simulation. The best switching speed of the new structures is 120% faster than that of the rectangular 3-terminal device. The optimized 3-terminal device offers high speed while maintaining the high reliability of the 3-terminal structure.

Key words: spin transfer torque

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    Received: 18 August 2015 Revised: 21 March 2011 Online: Published: 01 July 2011

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      Zhang Shuchao, Hu Jiangfeng, Chen Peiyi, Deng Ning. Simulation study of new 3-terminal devices for high speed STT-RAM[J]. Journal of Semiconductors, 2011, 32(7): 074007. doi: 10.1088/1674-4926/32/7/074007 Zhang S C, Hu J F, Chen P Y, Deng N. Simulation study of new 3-terminal devices for high speed STT-RAM[J]. J. Semicond., 2011, 32(7): 074007. doi: 10.1088/1674-4926/32/7/074007.Export: BibTex EndNote
      Citation:
      Zhang Shuchao, Hu Jiangfeng, Chen Peiyi, Deng Ning. Simulation study of new 3-terminal devices for high speed STT-RAM[J]. Journal of Semiconductors, 2011, 32(7): 074007. doi: 10.1088/1674-4926/32/7/074007

      Zhang S C, Hu J F, Chen P Y, Deng N. Simulation study of new 3-terminal devices for high speed STT-RAM[J]. J. Semicond., 2011, 32(7): 074007. doi: 10.1088/1674-4926/32/7/074007.
      Export: BibTex EndNote

      Simulation study of new 3-terminal devices for high speed STT-RAM

      doi: 10.1088/1674-4926/32/7/074007
      • Received Date: 2015-08-18
      • Accepted Date: 2010-12-16
      • Revised Date: 2011-03-21
      • Published Date: 2011-06-22

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