Citation: |
Zhang Shuchao, Hu Jiangfeng, Chen Peiyi, Deng Ning. Simulation study of new 3-terminal devices for high speed STT-RAM[J]. Journal of Semiconductors, 2011, 32(7): 074007. doi: 10.1088/1674-4926/32/7/074007
Zhang S C, Hu J F, Chen P Y, Deng N. Simulation study of new 3-terminal devices for high speed STT-RAM[J]. J. Semicond., 2011, 32(7): 074007. doi: 10.1088/1674-4926/32/7/074007.
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Simulation study of new 3-terminal devices for high speed STT-RAM
doi: 10.1088/1674-4926/32/7/074007
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Abstract
To improve the performance of spin transfer torque random access memory (STT-RAM), especially writing speed, we propose three modified 3-terminal STT-RAM cells. A magnetic dynamic process in the new structures was investigated through micro-magnetic simulation. The best switching speed of the new structures is 120% faster than that of the rectangular 3-terminal device. The optimized 3-terminal device offers high speed while maintaining the high reliability of the 3-terminal structure.-
Keywords:
- spin transfer torque
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References
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