SEMICONDUCTOR PHYSICS

Compositional dependence of Raman frequencies in SixGe1-x alloys

Zheng Wenli and Li Tinghui

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Abstract: Increases in Si content and the calculated Raman spectra acquired from the SixGe1-x alloys reveal that the frequencies of the Ge-Si and Si-Si modes are up-shifted obviously, meanwhile that of the Ge-Ge optical mode is down-shifted, which is strongly dependent on their microstructural changes. The linear decrease and increase caused by their force constant (bond lengths and bond angles) changes, which can be used as a fingerprint to identify the average Si content. The complex microstructural changes induced by increasing Si content can be clearly displayed by Raman spectra transformation.

Key words: Raman spectroscopySixGe1-x nanocrystalsDFT calculation

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    Received: 21 August 2015 Revised: 29 May 2012 Online: Published: 01 November 2012

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      Zheng Wenli, Li Tinghui. Compositional dependence of Raman frequencies in SixGe1-x alloys[J]. Journal of Semiconductors, 2012, 33(11): 112001. doi: 10.1088/1674-4926/33/11/112001 Zheng W L, Li T H. Compositional dependence of Raman frequencies in SixGe1-x alloys[J]. J. Semicond., 2012, 33(11): 112001. doi: 10.1088/1674-4926/33/11/112001.Export: BibTex EndNote
      Citation:
      Zheng Wenli, Li Tinghui. Compositional dependence of Raman frequencies in SixGe1-x alloys[J]. Journal of Semiconductors, 2012, 33(11): 112001. doi: 10.1088/1674-4926/33/11/112001

      Zheng W L, Li T H. Compositional dependence of Raman frequencies in SixGe1-x alloys[J]. J. Semicond., 2012, 33(11): 112001. doi: 10.1088/1674-4926/33/11/112001.
      Export: BibTex EndNote

      Compositional dependence of Raman frequencies in SixGe1-x alloys

      doi: 10.1088/1674-4926/33/11/112001
      • Received Date: 2015-08-21
      • Accepted Date: 2012-04-20
      • Revised Date: 2012-05-29
      • Published Date: 2012-10-23

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