Chin. J. Semicond. > 2006, Volume 27 > Issue 6 > 1042-1045
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GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment

Wang Hui, Guo Xia, Liang Ting, Liu Shiwen, Gao Guo and Shen Guangdi

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Abstract: GaAs and GaN wafer pairs are successfully bonded based on the hydrophilic surface treatment.The bonding is carried out at 500℃ in N2 atmosphere for 10min.It is found that a large fraction of the interface area is well bonded.SEM results indicate that there is no air gap at the bonding interface.PL measurements indicate that the crystal structure is slightly affected by the wafer bonding process.Visible light transmission measurements indicate that the GaAs/GaN bonded interface is translucent.Success in GaAs/GaN direct wafer bonding has great implications for the integration of GaAs and GaN semiconductor materials.

Key words: directly wafer bonding, GaAs, GaN, optoelectronic integration

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2006

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      Article Navigation >  Journal of Semiconductors  > 2006  >  27(6): 1042-1045
      Wang Hui, Guo Xia, Liang Ting, Liu Shiwen, Gao Guo, Shen Guangdi. GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment[J]. Journal of Semiconductors, 2006, In Press. Wang H, Guo X, Liang T, Liu S W, Gao G, Shen G D. GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment[J]. Chin. J. Semicond., 2006, 27(6): 1042.Export: BibTex EndNote
      Citation:
      Wang Hui, Guo Xia, Liang Ting, Liu Shiwen, Gao Guo, Shen Guangdi. GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment[J]. Journal of Semiconductors, 2006, In Press.

      Wang H, Guo X, Liang T, Liu S W, Gao G, Shen G D. GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment[J]. Chin. J. Semicond., 2006, 27(6): 1042.
      Export: BibTex EndNote
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      GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment

      • Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China

      • Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China

      • Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China

      • Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China

      • Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China

      • Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China

      • Received Date: 2015-08-20

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