| Citation: |
Yang Jinghai, Yang Lili, Zhang Yongjun, Liu Wenyan, Wang Dandan, Lang Jihui, Zhao Qingxiang. Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures[J]. Journal of Semiconductors, 2006, In Press.
Yang J H, Yang L L, Zhang Y J, Liu W Y, Wang Dandan, Lang J H, Zhao Q X. Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures[J]. Chin. J. Semicond., 2006, 27(11): 1945.
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Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures
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Abstract
The optical transition energy in GaInNAs/GaAs QW structures is investigated from theoretical and experimental aspects.The discrete-level energy and the band-gap energy are calculated using the effective-mass approximation and two-level repulsion model,respectively.The changes in the band-gap energy due to strains are also discussed.The theoretical and experimental transition energies of GaInNAs/GaAs quantum well structures are compared,and they agree well.The effect of N on the transition energies of GaInNAs/GaAs quantum well structures is analyzed simply -
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