| Citation: |
Xu Xiangdong, Guo Fulong, Zhou Wei, Liu Zhihong, Zhang Zhaojian, Li Xiyou, Zhang Wei, Qian Peixin. Thin Highly-Relaxed SiGe Induced by Ion Implantion intothe Epitaxial Substrates[J]. Journal of Semiconductors, 2006, In Press.
Xu X D, Guo F L, Zhou W, Liu Z H, Zhang Z J, Li X Y, Zhang W, Qian P X. Thin Highly-Relaxed SiGe Induced by Ion Implantion intothe Epitaxial Substrates[J]. Chin. J. Semicond., 2006, 27(13): 140.
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Thin Highly-Relaxed SiGe Induced by Ion Implantion intothe Epitaxial Substrates
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Abstract
We propose an approach for preparation of thin highly-relaxed SiGe by combining ion implantation and UHV/CVD techniques.The as-yielded materials are analyzed by micro-Raman spectroscopy and atomic force microscope.The results reveal that large area,thin (100nm) SiGe layer with high relaxation (94%) is thus successfully prepared.Selective chemical etching of SiGe,with the etching rate of 254nm/min,is also performed to study the mechanism.It is found that a strained-Si layer exists at the interface between the epi-SiGe and Si substrate,which is believed to be resulted from both ion implantation and formation of a relaxed-SiGe layer.-
Keywords:
- relaxed-SiGe,
- UHV/CVD,
- ion implantation
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References
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Proportional views
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