Chin. J. Semicond. > 2005, Volume 26 > Issue 12 > 2396-2400

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Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs

Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, Feng Qian and Li Peixian

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Abstract: AlGaN/GaN and AlGaN/AlN/GaN heterostructure two-dimensional electron gas materials are grown on sapphire substrates by low-pressure MOCVD technique.AlGaN/GaN HEMTs and AlGaN/AlN/GaN HEMTs are fabricated by the same device processes.The effects of an AlN spacer layer on the device performance of AlGaN/GaN HEMTs are studied by comparing the DC characteristics of these two different devices.

Key words: AlGaN/GaN AlN spacer layer two-dimensional electron gas HEMT

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, Feng Qian, Li Peixian. Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2005, In Press. Zhang J C, Wang C, Yang Y, Zhang, Zhang J F, Feng Q, Li P X. Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs[J]. Chin. J. Semicond., 2005, 26(12): 2396.Export: BibTex EndNote
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      Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, Feng Qian, Li Peixian. Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2005, In Press.

      Zhang J C, Wang C, Yang Y, Zhang, Zhang J F, Feng Q, Li P X. Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs[J]. Chin. J. Semicond., 2005, 26(12): 2396.
      Export: BibTex EndNote

      Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs

      • Received Date: 2015-08-19

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