SEMICONDUCTOR DEVICES

Performance improvement of light-emitting diodes with double superlattices confinement layer

Cheng Cheng1, 2, #, Yan Lei1, 3, #, Zhiqiang Liu1, 2, , Miao He3, , Zhi Li1, Xiaoyan Yi1, 2, Junxi Wang1, Jinmin Li1 and Deping Xiong3

+ Author Affiliations

 Corresponding author: Zhiqiang Liu, Email: lzq@semi.ac.cn; Miao He, herofate@126.com

PDF

Turn off MathJax

Abstract: In this study, the effect of double superlattices on GaN-based blue light-emitting diodes (LEDs) is analyzed numerically. One of the superlattices is composed of InGaN/GaN, which is designed before the multiple quantum wells (MQWs). The other one is AlInGaN/AlGaN, which is inserted between the last QB (quantum barriers) and p-GaN. The crucial characteristics of double superlattices LEDs structure, including the energy band diagrams, carrier concentrations in the active region, light output power, internal quantum efficiency, respectively, were analyzed in detail. The simulation results suggest that compared with the conventional AlGaN electron-blocking layer (EBL) LED, the LED with double superlattices has better performance due to the enhancement of electron confinement and the increase of hole injection. The double superlattices can make it easier for the carriers tunneling to the MQWs, especially for the holes. Furthermore, the LED with the double superlattices can effectively suppress the electron overflow out of multiple quantum wells simultaneously. From the result, we argue that output power is enhanced dramatically, and the efficiency droop is substantially mitigated when the double superlattices are used.

Key words: double superlatticesLEDGaN



[1]
Dai K H, Wang L S, Huang D X, et al. Influence of size of ZnO nanorods on light extraction enhancement of GaN-based light-emitting diodes. Chin Phys Lett, 2011, 28(9): 098501 doi: 10.1088/0256-307X/28/9/098501
[2]
Meng W U, Zeng Y P, Wang J X, et al. Investigation of a GaN nucleation layer on a patterned sapphire substrate. Chin Phys Lett, 2011, 28(6): 068502 doi: 10.1088/0256-307X/28/6/068502
[3]
Jeong J W, McCall J G, Shin G, et al. Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics. Cell, 2015, 162(3): 662 doi: 10.1016/j.cell.2015.06.058
[4]
Mukai T, Yamada M, Shujinakamura S N. Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes. Jpn J Appl Phys, 2014, 38(7A): 3976
[5]
Kim M H, Schubert M F, Dai Q, et al. Origin of efficiency droop in GaN-based light-emitting diodes. Appl Phys Lett, 2007, 91(18): 15
[6]
Schubert M F, Chhajed S, Kim K S, et al. Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes. Appl Phys Lett, 2007, 91(23): 2160
[7]
Schubert M F, Xu J, Kim J K, et al. Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop. Appl Phys Lett, 2008, 93(4): 183507
[8]
Xie J, Ni X, Fan Q, et al. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers. Appl Phys Lett, 2008, 93(12): 121107 doi: 10.1063/1.2988324
[9]
Rozhansky I V and Zakheim D A. Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping. Phys Status Solidi, 2006, 3(6): 2160 doi: 10.1002/(ISSN)1610-1642
[10]
Kim A Y, Götz W, Steigerwald D A, et al. Performance of High-power AlInGaN light emitting diodes. Phys Status Solidi, 2015, 188(1): 15
[11]
Shen Y C, Mueller G O, Watanabe S, et al. Auger recombination in InGaN measured by photoluminescence. Appl Phys Lett, 2007, 91(14): 2
[12]
Delaney K T, Rinke P, Walle C G V D. Auger recombination rates in nitrides from first principles. Appl Phys Lett, 2009, 94(19): 141101
[13]
Wang L, Jin J, Mi C, et al. A review on experimental measurements for understanding efficiency droop in InGaN-based light-emitting diodes. Materials, 2017, 10(11): 1233 doi: 10.3390/ma10111233
[14]
Park J H, Cho J, Schubert E F, et al. The effect of imbalanced carrier transport on the efficiency droop in GaInN-based blue and green light-emitting diodes. Energies, 2017, 10(9): 1277 doi: 10.3390/en10091277
[15]
Oh N C, Kim T S, Lim S Y, et al. High temperature behavior of injection and radiative efficiencies and its effects on the efficiency droop in InGaN/GaN light emitting diodes. J Nanosci Nanotechnol, 2016, 16: 11640 doi: 10.1166/jnn.2016.13566
[16]
Piprek J, Römer F, Witzigmann B. On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements. Appl Phys Lett, 2015, 106(10): 2217
[17]
Kuo Y K, Tsai M C, Yen S H. Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer. Opt Commun, 2009, 282(21): 4252 doi: 10.1016/j.optcom.2009.07.036
[18]
Liu Z, Wei T, Guo E, et al. Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate. Appl Phys Lett, 2011, 99(9): 1081
[19]
Kuo Y K, Chang J Y, Tsai M C, et al. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers. Appl Phys Lett, 2009, 95(1): 181113
[20]
Shi J L, Shin Y C, Kim K C, et al. The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers. J Cryst Growth, 2008, 311(1): 103 doi: 10.1016/j.jcrysgro.2008.10.047
[21]
Song T L, Chua S J, Fitzgerald E A, et al. Strain relaxation in graded InGaN/GaN epilayers grown on sapphire. Appl Phys Lett, 2003, 83(8): 1545 doi: 10.1063/1.1598295
[22]
Zhong C, Jia C, Zhang G, et al. Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs. Opt Express, 2013, 21(7): 8444 doi: 10.1364/OE.21.008444
[23]
Huang Y, Liu Z, Yi X, et al. Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes. AIP Adv, 2016, 6(4): 408
[24]
Jhalani V A, Zhou J J and Bernardi M. Ultrafast hot carrier dynamics in GaN and its impact on the efficiency droop. Nano Lett, 2017, 17(8): 5012 doi: 10.1021/acs.nanolett.7b02212
[25]
Yan Q R, Zhang Y, Yan Q A, et al. Effect of an asymmetry n-AlGaN layer on performance of dual-blue wavelength light-emitting diodes. Acta Phys Sin, 2012, 61(3): 330
Fig. 2.  (Color online) (a) Hole and (b) Electron concentrations for the (a) AlGaN EBL structures and (b) the double superlattices EBL at 150 mA.

Fig. 3.  (Color online) (a) Output power and (b) IQE curves as a function of injection current for the double superlattices EBL and AlGaN EBL structures, respectively.

Fig. 1.  (Color online) Energy band diagrams of (a) AlGaN EBL structures and (b) the double superlattices EBL at 150 mA.

[1]
Dai K H, Wang L S, Huang D X, et al. Influence of size of ZnO nanorods on light extraction enhancement of GaN-based light-emitting diodes. Chin Phys Lett, 2011, 28(9): 098501 doi: 10.1088/0256-307X/28/9/098501
[2]
Meng W U, Zeng Y P, Wang J X, et al. Investigation of a GaN nucleation layer on a patterned sapphire substrate. Chin Phys Lett, 2011, 28(6): 068502 doi: 10.1088/0256-307X/28/6/068502
[3]
Jeong J W, McCall J G, Shin G, et al. Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics. Cell, 2015, 162(3): 662 doi: 10.1016/j.cell.2015.06.058
[4]
Mukai T, Yamada M, Shujinakamura S N. Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes. Jpn J Appl Phys, 2014, 38(7A): 3976
[5]
Kim M H, Schubert M F, Dai Q, et al. Origin of efficiency droop in GaN-based light-emitting diodes. Appl Phys Lett, 2007, 91(18): 15
[6]
Schubert M F, Chhajed S, Kim K S, et al. Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes. Appl Phys Lett, 2007, 91(23): 2160
[7]
Schubert M F, Xu J, Kim J K, et al. Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop. Appl Phys Lett, 2008, 93(4): 183507
[8]
Xie J, Ni X, Fan Q, et al. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers. Appl Phys Lett, 2008, 93(12): 121107 doi: 10.1063/1.2988324
[9]
Rozhansky I V and Zakheim D A. Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping. Phys Status Solidi, 2006, 3(6): 2160 doi: 10.1002/(ISSN)1610-1642
[10]
Kim A Y, Götz W, Steigerwald D A, et al. Performance of High-power AlInGaN light emitting diodes. Phys Status Solidi, 2015, 188(1): 15
[11]
Shen Y C, Mueller G O, Watanabe S, et al. Auger recombination in InGaN measured by photoluminescence. Appl Phys Lett, 2007, 91(14): 2
[12]
Delaney K T, Rinke P, Walle C G V D. Auger recombination rates in nitrides from first principles. Appl Phys Lett, 2009, 94(19): 141101
[13]
Wang L, Jin J, Mi C, et al. A review on experimental measurements for understanding efficiency droop in InGaN-based light-emitting diodes. Materials, 2017, 10(11): 1233 doi: 10.3390/ma10111233
[14]
Park J H, Cho J, Schubert E F, et al. The effect of imbalanced carrier transport on the efficiency droop in GaInN-based blue and green light-emitting diodes. Energies, 2017, 10(9): 1277 doi: 10.3390/en10091277
[15]
Oh N C, Kim T S, Lim S Y, et al. High temperature behavior of injection and radiative efficiencies and its effects on the efficiency droop in InGaN/GaN light emitting diodes. J Nanosci Nanotechnol, 2016, 16: 11640 doi: 10.1166/jnn.2016.13566
[16]
Piprek J, Römer F, Witzigmann B. On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements. Appl Phys Lett, 2015, 106(10): 2217
[17]
Kuo Y K, Tsai M C, Yen S H. Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer. Opt Commun, 2009, 282(21): 4252 doi: 10.1016/j.optcom.2009.07.036
[18]
Liu Z, Wei T, Guo E, et al. Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate. Appl Phys Lett, 2011, 99(9): 1081
[19]
Kuo Y K, Chang J Y, Tsai M C, et al. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers. Appl Phys Lett, 2009, 95(1): 181113
[20]
Shi J L, Shin Y C, Kim K C, et al. The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers. J Cryst Growth, 2008, 311(1): 103 doi: 10.1016/j.jcrysgro.2008.10.047
[21]
Song T L, Chua S J, Fitzgerald E A, et al. Strain relaxation in graded InGaN/GaN epilayers grown on sapphire. Appl Phys Lett, 2003, 83(8): 1545 doi: 10.1063/1.1598295
[22]
Zhong C, Jia C, Zhang G, et al. Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs. Opt Express, 2013, 21(7): 8444 doi: 10.1364/OE.21.008444
[23]
Huang Y, Liu Z, Yi X, et al. Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes. AIP Adv, 2016, 6(4): 408
[24]
Jhalani V A, Zhou J J and Bernardi M. Ultrafast hot carrier dynamics in GaN and its impact on the efficiency droop. Nano Lett, 2017, 17(8): 5012 doi: 10.1021/acs.nanolett.7b02212
[25]
Yan Q R, Zhang Y, Yan Q A, et al. Effect of an asymmetry n-AlGaN layer on performance of dual-blue wavelength light-emitting diodes. Acta Phys Sin, 2012, 61(3): 330
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3452 Times PDF downloads: 51 Times Cited by: 0 Times

    History

    Received: 22 February 2018 Revised: 06 May 2018 Online: Uncorrected proof: 15 June 2018Published: 01 November 2018

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Cheng Cheng, Yan Lei, Zhiqiang Liu, Miao He, Zhi Li, Xiaoyan Yi, Junxi Wang, Jinmin Li, Deping Xiong. Performance improvement of light-emitting diodes with double superlattices confinement layer[J]. Journal of Semiconductors, 2018, 39(11): 114005. doi: 10.1088/1674-4926/39/11/114005 C Cheng, Y Lei, Z Q Liu, M He, Z Li, X Y Yi, J X Wang, J M Li, D P Xiong, Performance improvement of light-emitting diodes with double superlattices confinement layer[J]. J. Semicond., 2018, 39(11): 114005. doi: 10.1088/1674-4926/39/11/114005.Export: BibTex EndNote
      Citation:
      Cheng Cheng, Yan Lei, Zhiqiang Liu, Miao He, Zhi Li, Xiaoyan Yi, Junxi Wang, Jinmin Li, Deping Xiong. Performance improvement of light-emitting diodes with double superlattices confinement layer[J]. Journal of Semiconductors, 2018, 39(11): 114005. doi: 10.1088/1674-4926/39/11/114005

      C Cheng, Y Lei, Z Q Liu, M He, Z Li, X Y Yi, J X Wang, J M Li, D P Xiong, Performance improvement of light-emitting diodes with double superlattices confinement layer[J]. J. Semicond., 2018, 39(11): 114005. doi: 10.1088/1674-4926/39/11/114005.
      Export: BibTex EndNote

      Performance improvement of light-emitting diodes with double superlattices confinement layer

      doi: 10.1088/1674-4926/39/11/114005
      Funds:

      Project supported by the National Key Research and Development Program of China (No. 2016YFB0400102), the Beijing Municipal Science and Technology Project (Nos. Z161100002116032, D12110300140000), the National Basic Research Program of China (No. 2011CB301902), the Guangzhou Science & Technology Planning Project of Guangdong Province, China (Nos. 201604016095, 201604030035), the Zhongshan Science & Technology Planning Project of Guangdong Province, China (No. 2017A1008), and the Science & Technology Planning Project of Guangdong Province (No. 2015B010112002).

      More Information
      • Corresponding author: Email: lzq@semi.ac.cnherofate@126.com
      • Received Date: 2018-02-22
      • Accepted Date: 2018-01-01
      • Revised Date: 2018-05-06
      • Published Date: 2018-11-01

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return