| Citation: |
Ji Xiaoli, Yang Fuhua, Wang Junxi, Duan Ruifei, Ding Kai, Zeng Yiping, Wang Guohong, Li Jinmin. Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes[J]. Journal of Semiconductors, 2010, 31(9): 094009. doi: 10.1088/1674-4926/31/9/094009
Ji X L, Yang F H, Wang J X, Duan R F, Ding K, Zeng Y P, Wang G H, Li J M. Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes[J]. J. Semicond., 2010, 31(9): 094009. doi: 10.1088/1674-4926/31/9/094009.
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Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes
doi: 10.1088/1674-4926/31/9/094009
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Abstract
Asymmetric InGaN/GaN multiple-quantum well (MQW) light-emitting diodes were fabricated to expose the luminescence distribution and explore the hole transport. Under electrical injection, the sample with a wNQW active region in which the first QW nearest the p-side (QW1) is wider than the subsequent QWs shows a single long-wavelength light-emission peak arising from QW1. The inverse nWQW sample with a narrow QW1 shows one short-wavelength peak and one long-wavelength peak emitted separately from QW1 and the subsequent QWs. Increasing the barrier thickness between QW1 and the second QW (QWB1) in the nWQW structure, the long-wavelength peak is suppressed and the total light-emission intensity decreases. It was concluded that the nWQW and thin-QWB1 structure can improve the hole transport, and hence enhance the light-emission from the subsequent QWs and increase the internal quantum efficiency.-
Keywords:
- InGaN
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