| Citation: |
Li Weiwei, Zhao Youwen, Dong Zhiyuan, Yang Jun, Hu Weijie, Ke Jianhong, Huang Yan, Gao Zhenhua. Luminescence spectroscopy of ion implanted AlN bulk single crystal[J]. Journal of Semiconductors, 2009, 30(8): 083002. doi: 10.1088/1674-4926/30/8/083002
Li W W, Zhao Y W, Dong Z Y, Yang J, Hu W J, Ke J H, Huang Y, Gao Z H. Luminescence spectroscopy of ion implanted AlN bulk single crystal[J]. J. Semicond., 2009, 30(8): 083002. doi: 10.1088/1674-4926/30/8/083002.
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Luminescence spectroscopy of ion implanted AlN bulk single crystal
doi: 10.1088/1674-4926/30/8/083002
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Abstract
High concentrations of Si and Zn were implanted into (0001) AlN bulk crystal grown by the self-seeded physical vapor transport (PVT) method. Cathode luminescence (CL) and photoluminescence (PL) spectroscopy were used to investigate the defects and properties of the implanted AlN. PL spectra of the implanted AlN are dominated by a broad near-band luminescence peak between 200 and 254 nm. After high temperature annealing, implantationinduced lattice damages are recovered and the PL intensity increases significantly, suggesting that the implantedimpurity Si and Zn occupy lattice site of Al. CL results imply that a 457 nm peak is Al vacancy related. Resistanceof the AlN samples is still very high after annealing, indicating a low electrical activation efficiency of the impurityin AlN single crystal.-
Keywords:
- AlN
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