Chin. J. Semicond. > 2007, Volume 28 > Issue 5 > 692-695

PAPERS

2.5Gb/s/ch 0.18μm CMOS Data Recovery Circuit

Liu Yongwang, Wang Zhigong and Li Wei

+ Author Affiliations

PDF

Abstract: A 2.5Gb/s/ch data recovery (DR) circuit is designed for an SFI-5 interface.To make the parallel data bit-synchronization and reduce the bit error rate (BER),a delay locked loop (DLL) is used to place the center of the data eye exactly at the rising edge of the data-sampling clock.A single channel DR circuit was fabricated in TSMC’s standard 0.18μm CMOS process.The chip area is 0.46mm2.With a 231-1 pseudorandom bit sequence (PRBS) input,the RMS jitter of the recovered 2.5Gb/s data is 3.3ps.The sensitivity of the single channel DR is less than 20mV with 1e12 BER.

Key words: data recoverydelay locked loopbit-synchronization

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2523 Times PDF downloads: 2033 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 13 December 2006 Online: Published: 01 May 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Liu Yongwang, Wang Zhigong, Li Wei. 2.5Gb/s/ch 0.18μm CMOS Data Recovery Circuit[J]. Journal of Semiconductors, 2007, In Press. Liu Y W, Wang Z G, Li W. 2.5Gb/s/ch 0.18μm CMOS Data Recovery Circuit[J]. Chin. J. Semicond., 2007, 28(5): 692.Export: BibTex EndNote
      Citation:
      Liu Yongwang, Wang Zhigong, Li Wei. 2.5Gb/s/ch 0.18μm CMOS Data Recovery Circuit[J]. Journal of Semiconductors, 2007, In Press.

      Liu Y W, Wang Z G, Li W. 2.5Gb/s/ch 0.18μm CMOS Data Recovery Circuit[J]. Chin. J. Semicond., 2007, 28(5): 692.
      Export: BibTex EndNote

      2.5Gb/s/ch 0.18μm CMOS Data Recovery Circuit

      • Received Date: 2015-08-18
      • Accepted Date: 2006-10-17
      • Revised Date: 2006-12-13
      • Published Date: 2007-04-29

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return