Chin. J. Semicond. > 2006, Volume 27 > Issue 1 > 132-136

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A Novel Self-Bias High-Voltage Device Structure for Start-Up Circuit of Off-Line Switching Model Power Supply IC

Liu Jizhi, Chen Xingbi and Li Ding

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Abstract: A novel self-bias high-voltage device structure for the start-up circuit of an off-line switching model power supply IC is described.The structure and properties of the device,made by RESURF technology,are analyzed and simulated.Using this novel start-up circuit structure for the off-line switching model power supply IC can save the cell area,reduce the power consumption of the circuit,and easily control and supply the larger output voltage.

Key words: switching model power supplystart-up circuitself-biashigh-voltage device

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2006

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      Liu Jizhi, Chen Xingbi, Li Ding. A Novel Self-Bias High-Voltage Device Structure for Start-Up Circuit of Off-Line Switching Model Power Supply IC[J]. Journal of Semiconductors, 2006, In Press. Liu J Z, Chen X B, Li D. A Novel Self-Bias High-Voltage Device Structure for Start-Up Circuit of Off-Line Switching Model Power Supply IC[J]. Chin. J. Semicond., 2006, 27(1): 132.Export: BibTex EndNote
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      Liu Jizhi, Chen Xingbi, Li Ding. A Novel Self-Bias High-Voltage Device Structure for Start-Up Circuit of Off-Line Switching Model Power Supply IC[J]. Journal of Semiconductors, 2006, In Press.

      Liu J Z, Chen X B, Li D. A Novel Self-Bias High-Voltage Device Structure for Start-Up Circuit of Off-Line Switching Model Power Supply IC[J]. Chin. J. Semicond., 2006, 27(1): 132.
      Export: BibTex EndNote

      A Novel Self-Bias High-Voltage Device Structure for Start-Up Circuit of Off-Line Switching Model Power Supply IC

      • Received Date: 2015-08-20

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