Chin. J. Semicond. > 2001, Volume 22 > Issue 2 > 228-233

CONTENTS

利用FN电流估计薄栅MOS结构栅氧化层的势垒转变区的宽度

毛凌锋 , 谭长华 and 许铭真

PDF

Key words: FN电流, MOS结构, 栅氧化层

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2243 Times PDF downloads: 1417 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Export: BibTex EndNote
      Citation:


      Export: BibTex EndNote

      • Received Date: 2015-08-19

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return